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Hybrid Lead Halide Perovskite Films with Large Grain Size Via Spin‐Coating Free Fabrication
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-12-30 , DOI: 10.1002/pssa.202000650 Wenyan Liu 1 , Pengfei Ma 1 , Jiaying Xu 1 , Changhao Wang 1 , Chen Wang 2 , Minglei Qu 1 , Shanpeng Wen 2
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-12-30 , DOI: 10.1002/pssa.202000650 Wenyan Liu 1 , Pengfei Ma 1 , Jiaying Xu 1 , Changhao Wang 1 , Chen Wang 2 , Minglei Qu 1 , Shanpeng Wen 2
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Herein, a spin‐coating‐free method to deposit CH3NH3PbI3 perovskite films with large grains is demonstrated. The effect of processing temperature on the property of hybrid lead halide perovskite films is investigated. It is found that the grain domain size is enlarged by increasing processing temperature. Dense and uniform CH3NH3PbI3 films with grain domain size close to 1 mm are obtained using this method. A higher processing temperature also promotes the conversion from precursors solution to perovskite, but excessive temperature induces a poor crystalline state. About 150 °C is proved to be close to the optimal processing temperature to form perovskite films with less defect density, lower charge recombination, and longer charge carrier lifetimes. Space‐charge‐limited current method is used to investigate the charge transport efficiency based on CH3NH3PbI3 perovskite films. The results show that both the electron and hole mobility improve remarkably as the processing temperature increases.
中文翻译：
通过无旋涂工艺制备的具有大晶粒尺寸的混合卤化钙钛矿钙钛矿薄膜
在本文中，展示了一种无旋涂方法来沉积具有大晶粒的CH 3 NH 3 PbI 3钙钛矿薄膜。研究了加工温度对杂化卤化钙钛矿薄膜性能的影响。可以发现，通过提高加工温度，晶粒尺寸变大。致密均匀的CH 3 NH 3 PbI 3使用此方法可获得晶粒尺寸接近1毫米的薄膜。较高的加工温度还促进了从前体溶液到钙钛矿的转化，但是过高的温度会导致不良的结晶状态。事实证明，大约150°C接近最佳加工温度，形成的钙钛矿薄膜具有较少的缺陷密度，较低的电荷复合率和较长的载流子寿命。基于CH 3 NH 3 PbI 3钙钛矿薄膜，使用空间电荷限制电流方法研究电荷传输效率。结果表明，随着加工温度的升高，电子迁移率和空穴迁移率均显着提高。
更新日期：2020-12-30
中文翻译：
通过无旋涂工艺制备的具有大晶粒尺寸的混合卤化钙钛矿钙钛矿薄膜
在本文中，展示了一种无旋涂方法来沉积具有大晶粒的CH 3 NH 3 PbI 3钙钛矿薄膜。研究了加工温度对杂化卤化钙钛矿薄膜性能的影响。可以发现，通过提高加工温度，晶粒尺寸变大。致密均匀的CH 3 NH 3 PbI 3使用此方法可获得晶粒尺寸接近1毫米的薄膜。较高的加工温度还促进了从前体溶液到钙钛矿的转化，但是过高的温度会导致不良的结晶状态。事实证明，大约150°C接近最佳加工温度，形成的钙钛矿薄膜具有较少的缺陷密度，较低的电荷复合率和较长的载流子寿命。基于CH 3 NH 3 PbI 3钙钛矿薄膜，使用空间电荷限制电流方法研究电荷传输效率。结果表明，随着加工温度的升高，电子迁移率和空穴迁移率均显着提高。
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