A high entropy dopant approach has been used to prepare a new BIMEVOX ceramic system, Bi₂V_1-x(Mg_0.25Cu_0.25Ni_0.25Zn_0.25)_xO_5.5-3x/2. Structures were investigated using a combination of X-ray and neutron powder diffraction, with electrical characterisation by A.C. impedance spectroscopy. A γ-type phase is observed at room temperature over the compositional range 0.10 ≤ x ≤ 0.30, the upper limit of which is beyond that seen for all the single substituted systems based on these substituents, apart from BIMGVOX. No stabilisation of the fully disordered γ-phase is seen at room temperature over this compositional range, with only the incommensurately ordered γ'-phase evident below around 450 °C. Changes in defect structure are used to explain an apparent transition in the compositional variation of lattice parameters. The HE dopant approach has no detrimental effect on ionic conductivity, with values comparable to those of the single substituted systems based on the component oxides.

高熵掺杂法已用于制备新的BIMEVOX陶瓷系统Bi ₂ V _{1- x}（Mg _0.25 Cu _0.25 Ni _0.25 Zn _0.25）_x O _{5.5-3 x / 2}。通过X射线和中子粉末衍射的组合研究结构，并通过AC阻抗谱进行电表征。γ型相在室温下观察到的组成范围0.10≤  X ≤0.30，其上限超出了除BIMGVOX以外所有基于这些取代基的单取代系统的上限。在室温下，在此组成范围内，没有发现完全无序的γ相稳定，只有大约450°C以下的γ'相明显不规则排列。缺陷结构的变化用于解释晶格参数组成变化中的明显过渡。HE掺杂方法对离子电导率没有不利影响，其值可与基于组分氧化物的单取代系统的值相比。