Single Tin Dioxide nanowire (SnO₂NW) field-effect-transistors (FET) devices have been a great candidate to build electronic circuits, as chemical and physical sensors and study low dimensional properties and related effects. Ambipolarity is one of those effects that may direct its use for specific purposes, where a controllable separated unipolar mode can be achieved in one single device. SnO₂NWs grown by the VLS method were used for single NW devices fabrication by direct photolithography using the simple back-gate FET architecture. Single SnO₂NWFET's transport properties were explored, where on/off ratio, mobility and carrier density parameters were extracted, resulting in values around 10⁵, lower than 0.1 cm²/V and in the order of 10¹⁹/cm³, respectively. When under ultraviolet (UV) light, all devices presented UV induced ambipolary effect, where on/off states ratio with values of the same order were obtained and ranged from 1.12 to about 19.34. A simple band model was then proposed to explain such behavior.

单个二氧化锡纳米线（SnO ₂ NW）场效应晶体管（FET）器件已成为构建电子电路（作为化学和物理传感器）并研究低尺寸特性和相关效应的理想选择。双极性是可以指导其用于特定目的的那些影响之一，其中可以在一个单个设备中实现可控的分离单极性模式。通过VLS方法生长的SnO ₂ NW被用于通过使用简单的背栅FET架构的直接光刻技术来制造单个NW器件。探索了单个SnO ₂ NWFET的传输特性，提取了开/关比，迁移率和载流子密度参数，得出的值约为10 ⁵，低于0.1 cm ²/ V分别为10 ¹⁹ / cm ³。当在紫外线（UV）下时，所有器件均表现出紫外线诱导的双极性效应，其中获得的开/关态比值具有相同数量级，范围为1.12至约19.34。然后提出了一个简单的带模型来解释这种行为。