Overcoming the performance limits encountered with the conventional nanoscale transistors while simplifying the fabrication process is an objective that can give a new impulses to the modern nanoelectronics. A novel band-to-band tunneling junctionless carbon nanotube field-effect transistor, endowed with a lightly doped pocket underneath the coaxial gate, is computationally proposed herein. The quantum simulation based on the non-equilibrium Green's function formalism is used in the investigation while considering the self-consistent electrostatics and ballistic transport conditions. The proposed nanodevice switches via the modulation of band-to-band tunneling in the absence of thermionic emission mechanism. The pocket-induced barrier is employed to mitigate the ambiploar behavior attributed to the thermionic current and to improve the nanodevice performance. The simulations show that the proposed device exhibits improved leakage current, ambipolar behavior, subthermionic subthreshold swing, and current ratio in comparison to those provided by its conventional counterpart uniformly doped. In addition, the role of the pocket length in boosting the performance of the proposed band-to-band tunneling device is investigated, where the optimal length of lightly doped pocket is revealed. Note that the obtained enhancements have been thoroughly analyzed using the energy-position-resolved charge density and current spectrum. The recorded improvements, namely subthermionic subthreshold swing and high I_ON/I_OFF current ratio, together with the merits of junctionless paradigm, make the proposed pocket-based technique, as an intriguing strategy that can be used to boost the performance of similar nanoscale band-to-band tunneling junctionless field-effect transistors for high-performance and low-power applications.

克服常规纳米级晶体管遇到的性能限制，同时简化制造工艺的目标是可以给现代纳米电子学带来新的推动力。本文在计算上提出了一种新颖的带间隧穿无结碳纳米管场效应晶体管，该晶体管在同轴栅极下方具有轻掺杂的口袋。在考虑自洽静电和弹道输运条件的基础上，采用基于非平衡格林函数形式主义的量子模拟。所提出的纳米器件在不存在热电子发射机理的情况下通过带间隧穿的调制进行切换。口袋诱导的势垒被用来减轻归因于热电子电流的歧义行为并改善纳米器件性能。仿真结果表明，与传统的均匀掺杂器件相比，该器件具有改善的漏电流，双极性行为，亚热电子亚阈值摆幅和电流比。另外，研究了袋长度在提高所提出的带间隧穿装置的性能中的作用，其中揭示了轻掺杂袋的最佳长度。请注意，已使用能量位置分辨的电荷密度和电流谱对获得的增强进行了全面分析。记录的改进，即亚热亚阈下摆动和高I 仿真结果表明，与传统的均匀掺杂器件相比，该器件具有改善的漏电流，双极性行为，亚热电子亚阈值摆幅和电流比。另外，研究了袋长度在提高所提出的带间隧穿装置的性能中的作用，其中揭示了轻掺杂袋的最佳长度。请注意，已使用能量位置分辨的电荷密度和电流谱对获得的增强进行了全面分析。记录的改进，即亚热亚阈下摆动和高I 仿真结果表明，与传统的均匀掺杂器件相比，该器件具有改善的漏电流，双极性行为，亚热电子亚阈值摆幅和电流比。另外，研究了袋长度在提高所提出的带间隧穿装置的性能中的作用，其中揭示了轻掺杂袋的最佳长度。请注意，已使用能量位置分辨的电荷密度和电流谱对获得的增强进行了全面分析。记录的改进，即亚热亚阈下摆动和高I 研究了口袋长度在提高所提出的带间隧穿装置性能方面的作用，揭示了轻掺杂口袋的最佳长度。请注意，已使用能量位置分辨的电荷密度和电流谱对获得的增强进行了全面分析。记录的改进，即亚热亚阈下摆动和高I 研究了口袋长度在提高所提出的带间隧穿装置性能方面的作用，揭示了轻掺杂口袋的最佳长度。请注意，已使用能量位置分辨的电荷密度和电流谱对获得的增强进行了全面分析。记录的改进，即亚热亚阈下摆动和高I_ON / I _OFF电流比，再加上无结范例的优点，使提出的基于口袋的技术成为一种引人入胜的策略，可以用来提高类似的纳米级带间隧穿无结场效应晶体管的性能。高性能和低功耗应用。