The effect of high temperature annealing and swift heavy ion irradiation (SHI) on the migration behaviour of xenon (Xe) implanted into glassy carbon (GC) have been investigated. GC substrates were implanted with 200 keV Xe ions to a fluence of 1 × 10¹⁶ cm⁻² at room temperature. Some of the implanted samples were irradiated with 167 MeV Xe⁺²⁶ ions to a fluence of 1 × 10¹⁴ cm⁻² at room temperature. Both the as-implanted and implanted then irradiated were annealed in a vacuum at temperatures ranging from 1000 °C to 1500 °C in steps of 100 °C for 5 h. The RBS depth profiles showed that the implanted xenon migrates mostly into the bulk of the GC with the formation of a bimodal distribution. Microstructural changes in the glassy carbon substrate due to Xe bombardment and annealing were monitored using Raman spectroscopy. Raman results showed that swift heavy ion (SHI) irradiation caused some recrystallization in the amorphous region.

研究了高温退火和快速重离子辐照（SHI）对氙气（Xe）注入玻璃碳（GC）中迁移行为的影响。在室温下，将200 keV Xe离子注入GC基质，注入量为1×10 ¹⁶ cm ^-2。一些植入的样品用167 MeV Xe ⁺²⁶离子辐照，通量为1×10 ¹⁴ cm ^-2在室温下。植入后和植入后再进行辐照都在真空中于1000°C至1500°C的温度范围内以100°C的步长退火5 h。RBS深度曲线表明，植入的氙气大部分迁移到GC的大部分中，形成双峰分布。使用拉曼光谱法监测由于Xe轰击和退火引起的玻璃碳底物的微观结构变化。拉曼实验结果表明，快速重离子（SHI）辐照在非晶区引起了一些重结晶。