Secondary recrystallization is responsible for the sharp Goss texture ({110}<001>) of grain-oriented electrical steels. Many investigations have focused on establishing the relations between the sharpness of final Goss textures and primary recrystallization textures measured by the X-ray diffraction. However, the contributions of micro-texture characteristics to secondary recrystallization have not yet been well understood. Here, we report that the grain colonies composed of grains with similar orientations in the primary recrystallization matrix had a particular role on the development of secondary recrystallization via an original tracking experiment. We observe that the γ-grain (<111>//normal direction, ND) colonies facilitate the retention of primary recrystallization matrix grains (≤25µm) having 20-45° disorientation with {110}<001> and relatively large difference in the associated frequency with precise Goss orientation and that having deviation angle of 15°, promoting the abnormal growth of low-deviation-angle Goss grains especially after the onset of secondary recrystallization and leading to sharp final Goss texture. By contrast, the abnormal growth of high-deviation-angle Goss grains may be also promoted after the initiation of secondary recrystallization in case of randomly-distributed γ-grains in primary recrystallization matrix and thus resulted in deteriorated magnetic properties. In this way, we reveal the role of grain colony on secondary recrystallization and the underlying mechanism for the effect of primary recrystallization textures on the sharpness of final Goss texture. We also observe that the formation of grain colonies is mainly related to the initial solidification microstructure, processing route as well as the deformation and recrystallization features of γ-grains.

二次再结晶是导致取向电工钢具有尖锐的戈斯织构（{110} <001>）的原因。许多研究集中在建立最终戈斯纹理的清晰度和通过X射线衍射测量的初次再结晶纹理之间的关系。然而，微观结构特征对二次再结晶的贡献还没有被很好地理解。在这里，我们通过原始的追踪实验报告，由在初次重结晶基质中具有相似取向的晶粒组成的晶粒集落对二次重结晶的发展具有特殊作用。我们观察到，γ晶粒（<111> //法线方向，ND）菌落有助于保留具有20-45°取向且{110} < 001>且精确的Goss取向和偏角为15°的相关频率差异较大，特别是在二次重结晶开始后，特别是在二次重结晶开始后，促进了低偏角Goss晶粒的异常生长，并导致清晰的最终Goss纹理。相反，在初次重结晶基体中随机分布的γ晶粒的情况下，二次重结晶开始后，高偏角高斯晶粒的异常生长也可能被促进，从而导致磁性能下降。通过这种方式，我们揭示了晶粒集落在二次再结晶中的作用，以及初次再结晶织构对最终高斯织构锐度的影响的潜在机理。