Abstract

The paper reports that silicon with nanoclusters of manganese atoms has unique electrical, photoelectric, magnetic, and photomagnetic properties that are absent in ordinary doped semiconductor materials. The samples revealed an anomalously high impurity photosensitivity in the region of λ = 1–3 μm, a large negative magnetoresistance at room temperature, and new thermomagnetic and photomagnetic effects, which were observed in the same sample. The optimal electrophysical parameters of the samples were found. A unique set of the observed physical effects allows the creation of fundamentally new multifunction sensors of physical quantities based on these materials.

中文翻译：

---

硅与锰原子纳米簇的功能能力

摘要

该论文报道，具有锰原子纳米簇的硅具有独特的电，光电，磁和光磁特性，这在普通掺杂的半导体材料中是不存在的。样品显示出在λ= 1-3μm范围内异常高的杂质光敏性，在室温下具有较大的负磁阻以及在同一样品中观察到的新的热磁和光磁效应。找到了样品的最佳电物理参数。一组独特的观察到的物理效果允许基于这些材料创建根本上新的物理量多功能传感器。