Abstract

Heating of a thin metal film on a semiconductor surface and the corresponding state of stress of the near-contact region are considered. The stress estimation procedure in case of the local pulsed heating of a metallized region on the semiconductor surface is described. The theoretical and experimental sizes of the deformed silicon substrate region are compared with each other. An experiment is carried out using rectangular current pulses. The stress–strain region, which depends on the electric pulse duration and amplitude, is estimated. Experimental evidence shows a strong heterogeneity of the metallization track after pulse passage.

中文翻译：

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金属化轨道电降解过程中半导体近接触区的应力状态

摘要

考虑了半导体表面上的金属薄膜的加热以及近接触区域的相应应力状态。描述了在半导体表面上的金属化区域被局部脉冲加热的情况下的应力估计过程。将变形的硅衬底区域的理论尺寸和实验尺寸相互比较。使用矩形电流脉冲进行实验。估计应力应变区域，该区域取决于电脉冲的持续时间和幅度。实验证据表明，脉冲通过后，金属化轨迹具有很强的异质性。