Pulse-shape discrimination (PSD) is usually achieved using the different fast and slow decay components of inorganic scintillators, such as ${\mathrm{Ba}\mathrm{F}}_2$, $\mathrm{Cs}\mathrm{I}$:Tl, etc. However, ${\mathrm{La}\mathrm{Br}}_3$:$\mathrm{Ce}$ is considered to not possess different components at room temperature, but has been proved to have the capability of discriminating γ and α events using fast digitizers. In this paper, ionization-density-dependent transport and rate equations are used to quantitatively model the competing processes in a particle track. With one parameter set, the model reproduces the nonproportionality response of electrons or α particles, and explains the measured α and γ pulse-shape difference well. In particular, the nonlinear quenching of excited dopant ions, ${\mathrm{Ce}}^{3+}$, is confirmed herein to mainly contribute observable ionization α and γ pulse-shape differences. Further study of the luminescence quenching can also help to better understand the fundamental physics of nonlinear quenching and thus improve the crystal engineering. Moreover, based on the mechanism of dopant quenching, the ionization-density-dependent pulse-shape differences in other fast single-decay-component inorganic scintillators, such as lutetium yttrium oxyorthosilicate, ${\mathrm{Lu}}_{2(1\text{−}\mathrm{x})}{\mathrm{Y}}_{2\mathrm{x}}{\mathrm{Si}\mathrm{O}}_5:\mathrm{Ce}$ (LYSO) and ${\mathrm{Ce}\mathrm{Br}}_3$, are also predicted and verified with experiments.

中文翻译：

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LaBr3：Ce的电离密度依赖性闪烁脉冲形状和发光猝灭机理

通常使用无机闪烁体的不同快慢衰减成分来实现脉冲形状识别（PSD），例如 ${巴\mathrm{F}}_2$， $\mathrm{Cs}\mathrm{一世}$：Tl等。但是， ${啦溴}_3$：$策$被认为在室温下不具有不同的成分，但已被证明具有使用快速数字转换器区分γ和α事件的能力。在本文中，依赖于电离密度的传输和速率方程用于对颗粒轨道中的竞争过程进行定量建模。通过设置一个参数，该模型可以再现电子或α粒子的非比例响应，并很好地解释了所测得的α和γ脉冲形状差异。特别是激发掺杂离子的非线性猝灭，${策}^{3+}$在此证实了α，β，β，β和β主要是可观察到的电离α和γ脉冲形状差异。对发光猝灭的进一步研究也可以帮助更好地理解非线性猝灭的基本物理原理，从而改善晶体工程。此外，根据掺杂剂猝灭的机理，其他快速单衰变无机闪烁体（如氧化钇原硅酸钇）中与电离密度相关的脉冲形状差异，${鲁}_{2（\mathrm{1个}\text{-}\mathrm{X}）}{\mathrm{ÿ}}_{2\mathrm{X}}{硅\mathrm{Ø}}_5：策$ （LYSO）和 ${策溴}_3$，也可以通过实验进行预测和验证。