The advantages of low cost, compact size, and reduced power consumption makes a photonic chip‐based ultrafast laser source an appealing technology for diverse applications such as all‐optical signal processing, frequency metrology, spectroscopy, and sensing. To date, on‐chip ultrafast sources are typically generated by microresonator‐based Kerr‐comb solitons, which require precise phase tuning and frequency agile lasers to access the soliton state. Here, this work reports the first experimental demonstration of an externally pumped on‐chip ultrafast soliton laser source based on Raman soliton self‐frequency shift. By capitalizing on strong optical nonlinearity and versatile dispersion control in Ge₂₈Sb₁₂Se₆₀ chalcogenide glass waveguides, 185 fs duration Raman soliton generation has been demonstrated, possessing continuous wavelength tunability from 1589 to 1807 nm with signal‐to‐noise ratios consistently exceeding 65 dB. The source operates with pump pulse energies as low as 1.08 pJ, representing over three orders of magnitude improvement compared to fiber‐based Raman soliton sources. In addition, the generated solitons exhibit excellent spectral purity and stability free from parasitic sidebands. These experimental results are further validated by theoretical analysis, revealing insights into the soliton dynamics and critical device design guidelines. This work therefore enables a new class of broadly tunable, energy‐efficient, compact, and potentially cost‐effective on‐chip ultrafast laser sources.

中文翻译：

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基于外部泵浦光子芯片的超快拉曼孤子源

低成本，紧凑的尺寸和降低的功耗的优势使基于光子芯片的超快激光源成为吸引各种应用的诱人技术，例如全光信号处理，频率计量，光谱学和传感。迄今为止，片上超快光源通常由基于微谐振器的Kerr-comb孤子产生，这需要精确的相位调谐和频率捷变激光器才能进入孤子状态。在这里，这项工作报告了基于拉曼孤子自频移的外部泵浦片上超快孤子激光源的首次实验演示。通过利用Ge ₂₈ Sb ₁₂ Se _60中强大的光学非线性和通用色散控制硫族化物玻璃波导的拉曼孤子产生时间为185 fs，具有从1589至1807 nm的连续波长可调性，信噪比始终超过65 dB。该源的泵浦脉冲能量低至1.08 pJ，与基于光纤的拉曼孤子源相比，提高了三个数量级。此外，生成的孤子显示出极好的光谱纯度和稳定性，没有寄生边带。这些实验结果通过理论分析得到进一步验证，揭示了对孤子动力学和关键器件设计指南的见解。因此，这项工作使一类新型的可广泛调谐，节能，紧凑且具有潜在成本效益的片上超快激光光源成为可能。