In this paper, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm roughness of the anode recessed surface. By using the high work function metal Pt as the Schottky electrode, a low turn-on voltage of 0.71 V is obtained with a high uniformity of ± 0.023 V for 40 devices. Supported by the flat anode recess surface and related field plate design, the SBD device with the anode-cathode spacing of 15 μm show the specific on-resistance (R_on,sp) of 1.53 mΩ·cm² only, the physical breakdown voltage can reach 1678 V with a high power figure-of-merit (P-FOM) of 1840 MW/cm². For the SBD device with the anode-cathode spacing of 30 μm, the physical breakdown voltage can be as high as 2705 V and the power FOM is 2217 MW/cm².

在本文中，我们演示了具有凹陷阳极结构的Si衬底上的高性能横向AlGaN / GaN肖特基势垒二极管（SBD）。优化的快速蚀刻工艺可提供改善的蚀刻质量，且阳极凹入表面的粗糙度为0.26 nm。通过将高功函数金属Pt用作肖特基电极，可以为40个器件提供0.71 V的低导通电压，并具有±0.023 V的高均匀性。在平坦的阳极凹面和相关的场板设计的支持下，阳极-阴极间距为15μm的SBD器件仅显示出1.53mΩ·cm ²的比导通电阻（R _on，sp），物理击穿电压可以达到1678 V，具有1840 MW / cm ²的高功率品质因数（P-FOM）。对于阳极-阴极间隔为30μm的SBD器件，物理击穿电压可以高达2705 V，功率FOM为2217 MW / cm ²。