The incorporation of dual-metal, double-gate, germanium pocket and hetero gate dielectric tunnel field effect transistor (DMG-DG-Ge pocket TFET) allows the conceptualization and realization of suppressed ambipolarity. These deployed technology boosters for the TFET tailor the electric field as per the need at source-channel and drain-channel interfaces. The novelty of this work lies in its dual-metal and hetero dielectric structure that are introduced in Ge- pocket TFET structure. The major goal achieved here is enhanced I_ON/I_OFF ratio. Further using the exhaustive and calibrated TCAD analysis, this work examines the analog/RF and linearity distortion performance of DMG-DG-Ge pocket TFET. Here, intrinsic device capacitances, transconductance, cutoff frequency, transgeneration factor (TGF), higher order derivatives of drain current (g_m2 and g_m3), VIP₂, VIP₃, IIP₃ and IMD₃ are being extracted. Effect of different device parameters: channel length, body thickness, oxide thickness and pocket width on the dc, analog/RF and linearity distortion parameters has also been studied. The present analysis reveals an in-depth guideline for the design of DMG-DG-Ge pocket TFET with optimized analog/RF performance with least linearity distortions.

双金属，双栅极，锗口袋和异质栅介质隧道场效应晶体管（DMG-DG-Ge口袋TFET）的结合可以实现抑制双极性的概念化和实现。这些为TFET部署的技术助推器可根据源沟道和漏沟道接口的需要定制电场。这项工作的新颖之处在于在Ge- Pocket TFET结构中引入的双金属和异质介电结构。此处实现的主要目标是增强I _ON / I _OFF比。进一步使用详尽且经过校准的TCAD分析，这项工作研究了DMG-DG-Ge袖珍TFET的模拟/ RF和线性失真性能。在此，本征器件电容，跨导，截止频率，转换因子（TGF），漏极电流的高阶导数（g _{m 2}和g _{m 3}），VIP ₂，VIP ₃，IIP ₃和IMD ₃正在被提取。还研究了不同器件参数的影响：通道长度，主体厚度，氧化物厚度和口袋宽度对直流，模拟/射频和线性失真参数的影响。本分析揭示了DMG-DG-Ge袖珍型TFET设计的深入指南，该设计具有优化的模拟/ RF性能和最小的线性失真。