GNRFET Graphene Nano-Ribbon Field-Effect Transistor is sensitive to geometric parameters. Therefore, changing parameters circuit characteristics can be improved or degraded. In this study, we propose a new approach to optimizing the GNRFETs. The effect of geometric and process parameters such as chirality, channel length, width, line edge roughness, oxide thickness, and doping on characteristics of an inverter gate is investigated based on GNRFET. Analysis of power consumption, delay, PDP, and SNM results indicate that GNRFETs adjustable parameters can significantly affect circuit performance. It is shown that SNM increases by changing channel length and width. Moreover, by reducing the channel length from 20 nm to 10 nm, delay for chirality (6,0) decreases by 50%, and delay for chirality (10,0) decreases by 53%. By increasing the Line Edge Roughness by 20%, power consumption for chirality (10,0) and chirality (6,0) increases by 18% and exponentially, respectively. Also, by decreasing the oxide thickness, SNM and power consumption are increased; however, the delay behaves differently with chiralities (6,0) and (10,0). This research demonstrates the importance of accurately determining the GNRFET adjustable parameters according to the design aims. A set of recommendations is provided for optimal parameters needed by digital circuit designers to use GNRFET in their design optimally.

GNRFET石墨烯纳米带场效应晶体管对几何参数敏感。因此，可以改善或降低改变参数的电路特性。在这项研究中，我们提出了一种优化GNRFET的新方法。基于GNRFET，研究了手性，沟道长度，宽度，线边缘粗糙度，氧化物厚度和掺杂等几何和工艺参数对逆变器栅极特性的影响。对功耗，延迟，PDP和SNM结果的分析表明，GNRFET的可调参数会显着影响电路性能。结果表明，SNM通过改变通道的长度和宽度而增加。此外，通过将沟道长度从20 nm减小到10 nm，手性（6,0）的延迟减少了50％，手性（10,0）的延迟减少了53％。通过将线边缘粗糙度提高20％，手性（10,0）和手性（6,0）的功耗分别增加了18％和指数级。另外，通过减小氧化物厚度，SNM和功耗增加；但是，延迟与手性（6,0）和（10,0）表现不同。这项研究证明了根据设计目标准确确定GNRFET可调参数的重要性。针对数字电路设计人员最佳使用GNRFET所需的最佳参数，提供了一组建议。这项研究证明了根据设计目标准确确定GNRFET可调参数的重要性。针对数字电路设计人员最佳使用GNRFET所需的最佳参数，提供了一组建议。这项研究证明了根据设计目标准确确定GNRFET可调参数的重要性。针对数字电路设计人员最佳使用GNRFET所需的最佳参数，提供了一组建议。