Silicon carbon nitride (SiCN) compounds have aroused great interest as dielectric materials for direct bonding because of the high thermal stability and high bond strength, as well as its Cu diffusion barrier properties. While wafer-to-wafer direct bonding, including the dielectric deposition step, is generally performed at high temperature (>350 C), applications such as heterogeneous chips and DRAMs would require wafer-to-wafer direct bonding at lower temperature (<250 C). In this study, we evaluate, for SiCN deposited at various temperatures, the impact for direct wafer bonding of lowering the temperature of all processes. Chemical and mechanical properties of SiCN direct bonding are studied.

氮化硅碳（SiCN）化合物由于具有高的热稳定性，高的结合强度以及其Cu扩散阻挡特性，引起了人们对于直接结合的介电材料的极大兴趣。虽然通常在高温（> 350 C）下执行晶圆对晶圆直接键合，包括介电沉积步骤，但诸如异构芯片和DRAM之类的应用将需要在较低温度（<250 C时）晶圆对晶圆直接键合）。在这项研究中，我们评估了在各种温度下沉积的SiCN对降低所有工艺温度对直接晶圆键合的影响。研究了SiCN直接键合的化学和机械性能。