Nanobelts with a representative rectangular cross section have attracted much interest, owing to their unique applications for exploring novel and efficient optoelectronic nanodevices. In this work, we report the mass production of high‐quality single‐crystalline CsPbI₃ nanobelts by a one‐step template‐free process using a solvothermal method. The as‐prepared nanobelts are typically sized in 170–305 nm in width, 50–170 nm in height, and several microns in length, respectively. Accordingly, their width‐to‐height ratio of the cross section could be tailored from 1 to 6.35 by adjusting the amount of Cs₂CO₃ within the raw materials, representing the formation of CsPbI₃ nanobelts in a tailored manner. The nanobelt growth was attributed mainly to a surfactant‐assisted, seed‐mediated anisotropic growth mechanism.

中文翻译：

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高质量CsPbI3纳米带的量身定制的增长

具有代表性的矩形横截面的纳米带由于其在探索新颖和有效的光电纳米器件方面的独特应用而引起了人们的极大兴趣。在这项工作中，我们报告了采用溶剂热法的一步法无模板工艺已批量生产了高质量的单晶CsPbI ₃纳米带。所制备的纳米带的大小通常分别为宽170-305 nm，高50-170 nm和长数微米。因此，可以通过调节原料中Cs ₂ CO ₃的量（代表CsPbI ₃的形成），将其横截面的宽高比调整为1到6.35。量身定制的纳米带。纳米带的生长主要归因于表面活性剂辅助的，种子介导的各向异性生长机制。