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Oxidative Chemical Vapor Deposition of Conducting Polymer Films on Nanostructured Surfaces for Piezoresistive Sensor Applications
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-12-28 , DOI: 10.1002/aelm.202000871
Fabian Muralter 1 , Anna Maria Coclite 1 , Kenneth K.S. Lau 2
Affiliation  

In this study, a novel, fully polymeric setup for piezoresistive sensing is prepared and tested. Monolayers of polystyrene (PS) nanospheres are assembled on flexible polyethylene naphthalate substrates. Subsequently, thin layers (≈50–100 nm) of poly(3,4‐ethylenedioxythiophene) (PEDOT) are deposited conformally around the spheres by oxidative chemical vapor deposition (oCVD). Voltage−current characteristics and direct resistance measurements are performed to test the electrical properties of the samples in their unstrained state and their piezoresistive response during bending. Substrate deposition temperature (Tsub) and film thickness (tPEDOT) are used as parameters to alter properties of the PEDOT thin films; increased Tsub and tPEDOT lead to samples exhibiting lower intrinsic resistance. The electrical conductivity of the samples is estimated to range as high as tens of S cm−1. Dopant exchange of the oCVD‐PEDOT layer (intrinsically, chlorine‐doped) is performed by putting the samples in 0.5 m sulfuric acid, which decreases their resistance by ≈1/3. Regarding the piezoresistive properties of the devices, acid treatment, higher Tsub and tPEDOT (thus, lower intrinsic resistance) yield samples with increased response. As a result, gauge factors as high as 11.4 are achieved. Due to their flexibility and low‐cost, the proposed structures can be readily employed as skin‐inspired or wearable electronic devices.

中文翻译:

用于压阻传感器应用的纳米结构表面上的导电聚合物膜的氧化化学气相沉积

在这项研究中,准备并测试了一种新颖的,完全聚合的压阻传感装置。聚苯乙烯(PS)纳米球单层组装在柔性聚萘二甲酸乙二醇酯基底上。随后,通过氧化化学气相沉积(oCVD)将聚(3,4-乙撑二氧噻吩)(PEDOT)的薄层(≈50-100nm)保形地沉积在球体周围。进行电压-电流特性和直接电阻测量以测试处于未应变状态的样品的电性能以及弯曲期间的压阻响应。衬底沉积温度(T sub)和膜厚度(t PEDOT)用作改变PEDOT薄膜性能的参数。T增加t PEDOT导致样品表现出较低的固有电阻。样品的电导率估计范围高达数十S cm -1。通过将样品置于0.5 m的硫酸中进行oCVD-PEDOT层的掺杂剂交换(本质上是掺杂氯),这将使电阻降低约1/3。关于器件的压阻特性,酸处理,较高的T subt PEDOT(因此,较低的内在电阻)可产生响应增加的样品。结果,实现了高达11.4的规格因子。由于它们的灵活性和低成本,建议的结构可以很容易地用作受皮肤启发或可穿戴的电子设备。
更新日期:2021-02-15
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