Abstract

The synthesis and sintering of the (AlN)_x(SiC)_{1 – x} solid solution have been studied under conditions of self-propagating high-temperature synthesis (SHS) gasostating at high nitrogen gas pressures (up to 110 MPa). The phase formation during the combustion of mixtures of aluminum and silicon carbide with a different amount of Al (from 35 to 60 wt %) is studied. It is shown that the optimal amount of aluminum mixed with silicon carbide to obtain a single-phase solid solution (with the complete conversion of aluminum to aluminum nitride, and also without the dissociation of silicon carbide) is 45–50 wt %. Using a mixture with 55–60 wt % Al leads to excessively high temperatures, which in turn leads to the decomposition of silicon carbide to Si + C elements. The optimal parameters for obtaining dense material in one stage are determined. The measured porosity and density of the samples allow us to establish that, for samples with 50 wt % of the aluminum content, prepressing is essential for the final density. It is found that the additive of 5 wt % yttrium oxide increases the density of the material by almost 10%. A similar effect is also exerted by an increase in the initial gas pressure from 80 to 110 MPa. The maximum density that is achieved is 2.7 g/cm³, which is 83% of the theoretical density. The total volumetric shrinkage of the material is 10% ± 0.5, which can be almost completely leveled by the addition of 3 wt % boron. The hardness of the samples reaches up to 2000 kg/mm².

中文翻译：

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通过自蔓延高温合成气化获得AlN-SiC固溶体的致密材料的可能性

摘要

（AlN）_x（SiC）_{1 – x}的合成与烧结在高氮气压力（高达110 MPa）的自蔓延高温合成（SHS）气化条件下，已经研究了固溶体。研究了铝和碳化硅与不同量的Al（35至60 wt％）的混合物燃烧过程中的相形成。结果表明，铝与碳化硅混合以获得单相固溶体（铝完全转化为氮化铝，并且不分解碳化硅）的最佳量为45-50 wt％。使用含55-60 wt％Al的混合物会导致过高的温度，进而导致碳化硅分解为Si + C元素。确定在一级获得致密材料的最佳参数。所测得的样品的孔隙率和密度使我们能够确定，对于铝含量为50 wt％的样品，预压对于最终密度至关重要。发现5重量％的氧化钇的添加剂使材料的密度增加了几乎10％。初始气压从80 MPa增加到110 MPa，也会产生类似的效果。达到的最大密度为2.7 g / cm³，这是理论密度的83％。材料的总体积收缩率为10％±0.5，可通过添加3 wt％的硼几乎完全消除。样品的硬度达到2000 kg / mm ²。