Defect time-evolution was investigated in Mg ion-implanted GaN after annealing at 1573K for an unprecedentedly long duration. Transmission electron microscopy directly revealed that annealing for over 30min reduced defects inhibiting Mg activation, just like annealing at 1753 K for a short duration. The cathodoluminescence intensity of donor–acceptor pair originating from Mg acceptors increased as the duration increased, and the intensity after annealing for 60min was higher than after short-duration annealing at 1753 K. These show the potential of lowering the annealing temperature by prolonging the duration, which would lead to practical annealing technology for Mg ion-implanted GaN.

在1573K的退火温度下进行了前所未有的长时间研究之后，研究了注入Mg离子的GaN中的缺陷时间演化。透射电子显微镜直接显示，退火超过30分钟减少了抑制Mg活化的缺陷，就像在1753 K上进行短时间退火一样。源于镁受体的供体-受体对的阴极发光强度随时间的增加而增加，退火60min后的强度高于1753 K的短时退火后的强度。这表明通过延长持续时间降低退火温度的潜力，这将为镁离子注入的GaN带来实用的退火技术。