The feasibility of using selective thermal cobalt metal (Co) atomic layer deposition (ALD) as high density Cu–Cu interconnect bonding is demonstrated at a low temperature (200 °C) and with minimal surface pretreatment. A Cu/Gap/Cu structure, which emulates 3-D ICs stacking is fabricated. Cobalt ALD showing seamless interconnection between copper (Cu) pads with 30- $\mu \text{m}$ pitch is demonstrated with greater than 90% yield through electrical measurements, SEM inspection, EDS, and focused ion beam (FIB) cross section.

中文翻译：

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使用选择性钴原子层沉积进行2.5-D / 3-D芯片集成技术的Cu-Cu键合

在低温（200°C）且表面预处理最少的情况下，证明了使用选择性热钴金属（Co）原子层沉积（ALD）作为高密度Cu-Cu互连键的可行性。制作了模拟3D IC堆叠的Cu / Gap / Cu结构。ALD钴显示了30-铜（Cu）焊盘之间的无缝互连 $ \ mu \ text {m} $ 通过电学测量，SEM检查，EDS和聚焦离子束（FIB）横截面证明，沥青的产率超过90％。