We present the first demonstration of a vertical cavity surface emitting laser (VCSEL) based on InAs quantum dots (QDs) on InP. A very high density of 10 ¹¹ cm ⁻² per QD layer, and a thin spacing layer of 15 nm are used to enhance the QD modal gain within the VCSEL cavity. Continuous wave (CW) operation is demonstrated at room temperature on optically pumped devices emitting at telecommunication wavelength (1550 nm), being the ground state transition of QDs. A very low threshold of 1.4 mW is obtained, corresponding to a value 6 times smaller than the best threshold we obtained on similar VCSEL structures integrating 1550 nm strained quantum wells. Wavelength tuning experiments have been also conducted due to a wedge cavity design. Laser emission in CW operation has been achieved on a large spectral window: from 1530 nm up to 1573 nm. A stable output polarization state with a polarization ratio exceeding 20 dB is also measured.

中文翻译：

---

低阈值1550 nm发射QD光泵浦VCSEL

我们展示了基于InP上InAs量子点（QD）的垂直腔表面发射激光器（VCSEL）的首次演示。10 ¹¹ cm ^-2的非常高的密度 每个QD层使用15 nm的薄间隔层来增强VCSEL腔内的QD模态增益。连续波（CW）操作在室温下在以电信波长（1550 nm）发射的光泵浦器件上得到了证明，这是QD的基态跃迁。获得了1.4 mW的极低阈值，该值比我们在集成1550 nm应变量子阱的类似VCSEL结构上获得的最佳阈值小6倍。由于楔腔设计，还进行了波长调谐实验。连续波操作中的激光发射已在较大的光谱窗口上实现：从1530 nm到1573 nm。还测量了偏振比超过20 dB的稳定输出偏振态。