This article introduces an accurate current-mode bandgap reference circuit design with a novel shared offset compensation scheme for its internal amplifiers. This bandgap circuit has been designed to operate over a very wide temperature range from -40 °C to 150 °C. Its output voltage is 1.16 V with a 3.3-V supply voltage. A multi-section curvature compensation method alleviates the error from the bipolar junction transistor's base-emitter nonlinear voltage dependence on temperature. The bandgap reference circuit contains two operational amplifiers that are utilized to generate proportional-to-absolute-temperature (PTAT) and complementary-to-absolute-temperature (CTAT) current sources. With the implementation of the described shared offset-cancellation methodology, the simulated output inaccuracy introduced by the amplifier is kept to a 5σ offset within ±4.6 μV while allowing to conserve die size and power consumption by preventing that each amplifier is accompanied by its own active auxiliary offset-cancellation circuit. Designed and fabricated in a 130-nm CMOS process technology, the bandgap reference has a measured output voltage shift of less than 1 mV over a -40 °C to 150 °C temperature range and an overall variation of ±8.2 mV across seven measured samples without trimming.

中文翻译：

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具有用于内部放大器的共享偏移消除方法的 1.16V 5.8 至 13.5ppm/°C 曲率补偿 CMOS 带隙参考电路


本文介绍了一种精确的电流模式带隙参考电路设计，其内部放大器采用新颖的共享失调补偿方案。该带隙电路设计用于在 -40 °C 至 150 °C 的宽温度范围内运行。其输出电压为 1.16V，电源电压为 3.3V。多段曲率补偿方法减轻了双极结型晶体管的基极-发射极非线性电压对温度依赖性的误差。带隙基准电路包含两个运算放大器，用于生成与绝对温度成比例 (PTAT) 和与绝对温度互补 (CTAT) 电流源。通过实施所描述的共享偏移消除方法，放大器引入的模拟输出误差被保持在±4.6μV内的5σ偏移，同时通过防止每个放大器都伴随着其自己的有源器件来节省芯片尺寸和功耗。辅助偏移消除电路。该带隙基准采用 130 nm CMOS 工艺技术设计和制造，在 -40 °C 至 150 °C 温度范围内测得的输出电压偏移小于 1 mV，七个测得样品的总体变化为 ±8.2 mV无需修剪。