Maximum oscillation frequency ( ${f}_{\textit {MAX}}$ ) of mm-wave transistors is one of the key figures of merit (FOMs) for evaluating the HF-performance of a given technology. However, accurate measurements of ${f}_{\textit {MAX}}$ are very difficult. Determination of ${f}_{\textit {MAX}}$ is significantly affected by the measurement uncertainties in the admittance ( ${y}$ ) parameters. In order to get rid of the random measurement error and to obtain a reliable and stable ${f}_{\textit {MAX}}$ value, the frequency dependent ${y}$ -parameters are described by rational functions formulated from the small-signal hybrid ${\pi }$ -model of the transistor under investigation. The parameters of these functions are determined following a least square error technique that minimizes the functional error with the measured data. The approach is especially useful for a fast and reliable evaluation of ${f}_{\textit {MAX}}$ value. Devices from two different SiGe and an FDSOI (Fully Depleted Silicon On Insulator) MOS technology are measured and stable ${f}_{\textit {MAX}}$ values are estimated following this approach.

中文翻译：

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SiGe HBT和MOSFET的可靠技术评估： ˚F _MAX 根据测量数据估算

最大振荡频率（ $ {f} _ {\ textit {MAX}} $ 毫米波晶体管是评估给定技术的HF性能的关键指标（FOM）之一。但是，准确的测量 $ {f} _ {\ textit {MAX}} $ 很难。测定 $ {f} _ {\ textit {MAX}} $ 受到导纳中测量不确定度的显着影响（ $ {y} $ ）参数。为了摆脱随机测量误差并获得可靠稳定 $ {f} _ {\ textit {MAX}} $ 值，取决于频率 $ {y} $ 参数由小信号混合动力公式化的有理函数描述 $ {\ pi} $ 晶体管的模型。这些函数的参数是根据最小二乘误差技术确定的，该技术将测量数据的功能误差最小化。该方法对于快速可靠地评估 $ {f} _ {\ textit {MAX}} $ 值。测量并稳定了来自两种不同SiGe和FDSOI（完全耗尽绝缘体上硅）MOS技术的器件 $ {f} _ {\ textit {MAX}} $ 按照这种方法估算值。