We demonstrated a resistive random access memory (RRAM) based embedded non-volatile memory (e-NVM) solution integrated in the 0.13 μm partially depleted silicon on insulator (PD-SOI) process. The memory devices show excellent reliability. It has good endurance up to 5 electrical cycles without any degradation in low resistance state (LRS) and high resistance state (HRS). It can retain the data up to 5 s even at 125 °C. Both the LRS and HRS show little variation. After γ-ray radiation with various total ionizing doses (TIDs), the memory characteristics of the device including resistance states, set/reset voltages are not significantly degraded, suggesting good anti-radiation capability. The proposed 1T1R device integrated in SOI process provides a potential candidate for those applications in radiation environments.

中文翻译：

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采用 0.13 µm 部分耗尽绝缘体上硅工艺的基于后端的电阻 RAM，可实现高度可靠的抗辐照应用


我们展示了基于电阻式随机存取存储器 (RRAM) 的嵌入式非易失性存储器 (e-NVM) 解决方案，该解决方案集成在 0.13 μm 部分耗尽绝缘体上硅 (PD-SOI) 工艺中。该存储器件表现出出色的可靠性。它具有高达 5 个电周期的良好耐久性，在低电阻状态 (LRS) 和高电阻状态 (HRS) 下不会出现任何退化。即使在 125 °C 下，它也能保留数据长达 5 秒。 LRS 和 HRS 几乎没有变化。经过不同总电离剂量（TID）的γ射线辐射后，器件的电阻状态、置位/复位电压等存储特性没有明显下降，表明器件具有良好的抗辐射能力。所提出的集成在 SOI 工艺中的 1T1R 器件为辐射环境中的应用提供了潜在的候选者。