In this letter, we demonstrate direct high-sensitivity proton detection by novel electrolyte-gated thin-film transistors. Integrating a sol-gel derived oxide channel and liquid electrolytes, a current switching by a factor of $10^{{7}}$ was achieved within a 0.5 V gate window. Manipulation of the ionic strength in the gating solution led to an impressively large electrostatic shift (48 mV/pH), outperforming reported devices and ultimately approaching the Nernst limit. By means of impedance spectroscopy and transient measurements, we identified spatial compression of ionic charges at the electrical double layers as the origin of sensitivity, with the response time being dominated by the ion-transport resistance.

中文翻译：

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接近电解质门控金属氧化物晶体管的能斯特检测极限

在这封信中，我们演示了通过新型电解质门控薄膜晶体管直接进行高灵敏度质子检测。集成了溶胶-凝胶衍生的氧化物通道和液体电解质，电流切换系数为 $ 10 ^ {{7}} $ 在0.5 V的栅极窗口内实现 门控溶液中离子强度的操纵导致了令人惊讶的大静电位移（48 mV / pH），性能超出了已报道的器件，并最终达到了能斯特极限。通过阻抗谱和瞬态测量，我们确定了电双层中离子电荷的空间压缩是敏感度的来源，响应时间主要由离子传输电阻决定。