Oxide semiconductors have emerged as ideal candidate materials for flexible electronics and circuits. However, complementary flip-flops, which are the essential building blocks in sequential circuits, based on all-oxide thin-film transistors (TFTs) have not yet been demonstrated. Here, we employed n-type indium gallium zinc oxide and p-type tin monoxide to achieve J-K flip-flop (JK-FF) and D-type edge-triggered FF (D-FF). The operation properties of the JK-FF and D-FF were characterised both statically and dynamically. The output signals of the D-FF show great robustness. The D-FF shows very short propagation delay times of 17 and $40~\mu \text{s}$ from “0” to “1” and from “1” to “0”, respectively. Based on the D-FFs, a two-bit counter with 90 transistors was designed and fabricated successfully, acting as either up-counter or down-counter. To the best of our knowledge, this counter has the highest integration among the reported thin-film complementary sequential circuits based on all-oxide transistors to date.

中文翻译：

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薄膜时序电路：基于p-SnO和n-InGaZnO的触发器和计数器

氧化物半导体已成为柔性电子和电路的理想候选材料。然而，基于全氧化物薄膜晶体管（TFT）的互补触发器是时序电路中必不可少的组成部分。在这里，我们采用n型铟镓锌氧化物和p型一氧化锡来实现JK触发器（JK-FF）和D型边缘触发FF（D-FF）。对JK-FF和D-FF的操作特性进行了静态和动态表征。D-FF的输出信号显示出很高的鲁棒性。D-FF的传播延迟时间非常短，为17和 $ 40〜\ mu \ text {s} $ 从“ 0”到“ 1”以及从“ 1”到“ 0”。基于D-FF，成功地设计和制造了带有90个晶体管的两位计数器，可以用作递增计数器或递减计数器。据我们所知，该计数器迄今为止在报道的基于全氧化物晶体管的薄膜互补时序电路中具有最高的集成度。