In this study, we propose a polysilicon (poly-Si) channel thin-film synaptic transistor based on an organic-inorganic hybrid electric-double-layer (EDL) structured gate dielectric. To implement the hybrid EDLs, which play a key role in artificial synaptic transistors, a protonic mobile ion-based bio-inspired chitosan electrolyte and a high-k Ta2O5 dielectric thin-film were applied. Synaptic modulation was realized on the poly-Si channels by the polarization reaction of mobile protonic ions in the organic chitosan electrolyte. The chemically and mechanically stable inorganic Ta2O5 dielectric capping layer prevented deterioration of the organic electrolyte due to the patterning and etching processes, enabling the fabrication of large-scale integrated circuits. The fabricated EDL field-effect transistors (FETs) verified essential synaptic behavior. Therefore, polarization and depolarization in EDLs, paired-pulse facilitation, and excitatory post-synaptic current modulation were successfully emulated by applying pre-synaptic stimulation spikes. As a result, the proposed CMOS-compatible poly-Si thin-film synaptic FETs based on hybrid EDLs are suitable for emerging neuromorphic systems and compact artificial neural networks.

中文翻译：

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多晶硅突触晶体管中有机-无机混合双电层的兴奋行为调节


在这项研究中，我们提出了一种基于有机-无机混合电双层（EDL）结构栅极电介质的多晶硅（poly-Si）沟道薄膜突触晶体管。为了实现在人工突触晶体管中发挥关键作用的混合 EDL，采用了质子移动离子基仿生壳聚糖电解质和高 k Ta2O5 介电薄膜。通过有机壳聚糖电解质中移动质子离子的极化反应在多晶硅通道上实现了突触调制。化学和机械稳定的无机 Ta2O5 介电覆盖层可防止有机电解质因图案化和蚀刻工艺而劣化，从而实现大规模集成电路的制造。制造的 EDL 场效应晶体管 (FET) 验证了基本的突触行为。因此，通过应用突触前刺激尖峰，可以成功模拟 EDL 中的极化和去极化、配对脉冲促进和兴奋性突触后电流调制。因此，所提出的基于混合 EDL 的 CMOS 兼容多晶硅薄膜突触 FET 适用于新兴的神经形态系统和紧凑的人工神经网络。