A SrSnO ₃ high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5- $\mu \text{m}$ gate length and 4- $\mu \text{m}$ source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2 mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, ${f} _{\text {T}}$ , of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, ${f} _{\text {max}}$ , of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.

中文翻译：

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具有GHz工作的SrSnO₃金属半导体场效应晶体管

对SrSnO ₃高频场效应晶体管（FET）进行说明。器件结构由具有重掺杂盖层的凹陷肖特基栅极FET组成。具有0.5- $ \ mu \ text {m} $ 闸门长度和4- $ \ mu \ text {m} $ 源极/漏极间距显示最大漏极电流为53 mA / mm，最大跨导为43.2 mS / mm。射频（RF）表征揭示了截止频率， $ {f} _ {\ text {T}} $ 为1.31 GHz（0.97 GHz），最大振荡频率为 $ {f} _ {\ text {max}} $ 在解嵌之前（之前）的3.25（3.25）GHz的，。这些结果代表了开发用于射频应用的钙钛矿材料的重要进展。