In this work, we explore the output-conductance function (G-function) to interpret the device characteristics of two-dimensional (2D) semiconductor transistors. Based on analysis of the device output conductance, the carrier mobility, and the channel as well as contact resistance are extracted. Thereafter the current-voltage (IV) characteristics of black phosphorous (BP) and MoS ₂ transistors from room to low temperature are modeled and compared to experiments. The G-function model proves its reliability and accuracy in parameter extraction and IV modeling of 2D transistors, regardless of the n- or p- type, the short- or long-channel and the Schottky or Ohmic contact. Moreover, this works shows its high potential in the device modeling and further circuit design of the 2D transistors, requiring only few parameters and simulating precise IV characteristics.

中文翻译：

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非线性输出电导函数，用于二维晶体管的稳健分析

在这项工作中，我们探索输出电导函数（G-function）以解释二维（2D）半导体晶体管的器件特性。基于对设备输出电导的分析，可提取载流子迁移率，沟道以及接触电阻。之后，黑磷（BP）和MoS ₂的电流-电压（IV）特性 对从室温到低温的晶体管进行建模，并与实验进行比较。G函数模型证明了其在二维晶体管的参数提取和IV建模中的可靠性和准确性，而与n型或p型，短通道或长通道以及肖特基或欧姆接触无关。此外，这项工作在2D晶体管的器件建模和进一步的电路设计中显示了其巨大潜力，仅需很少的参数并模拟精确的IV特性即可。