A millimeter-wave passive-integrated bandstop filter (BSF) with absorptive/reflectionless behavior is reported. It avoids the creation of RF-power reflections for filtered signals which can deteriorate earlier active stages in integrated RF front-end chains. It exploits a two-path transversal configuration in a multi-layer structure. Specifically, it is composed of a direct transmission line for the main path (top layer) and two lossy edge-grounded spiral-shaped resonators for the secondary path (bottom layer) that are coupled between them and to the main path. Thus, a sharp second-order stopband is created through destructive signal-interference effects between the two signal paths with intrinsic RF-power absorption within the volume of the lossy resonators. As practical validation, a 24.5-GHz on-chip millimeter-wave absorptive BSF circuit is built in a 0.13- $\mu \text{m}$ SiGe bipolar complementary metal-oxide-semiconductor [(Bi)-CMOS] technology and tested. Close agreement between simulated and measured results for this on-chip BSF circuit is achieved.

中文翻译：

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（Bi）-CMOS技术的片上毫米波集成吸收带阻滤波器

报告了具有吸收/无反射行为的毫米波无源集成带阻滤波器（BSF）。它避免了为滤波后的信号产生RF功率反射，而这种反射会恶化集成RF前端链中的早期有源级。它利用多层结构中的两路径横向配置。具体地，它由用于主路径（顶层）的直接传输线和耦合在主路径和主路径之间的两个用于次级路径（底层）的有损边缘接地的螺旋形谐振器组成。因此，通过两个信号路径之间的破坏性信号干扰效应，在有损谐振器的体积之内具有固有的RF功率吸收，会产生尖锐的二阶阻带。作为实际验证，一个24。 $ \ mu \ text {m} $ SiGe双极互补金属氧化物半导体[（Bi）-CMOS]技术并经过测试。该片上BSF电路的仿真结果与测量结果之间达成了紧密的一致。