Conduction mechanisms of ferroelectric tunnel junction (FTJ) using metal-ferroelectric-insulator- semiconductor (MFIS) on n- and p-type semiconductor is clarified by a new developed model, which is verified by the experimental results. In the model, electron tunneling from conduction band and valence band, and hole tunneling from valence band are included to calculate the read current in ON/OFF-state of MFIS-FTJ. The model explains the unexpected polarization polarity of ON/OFF-state in p-type and the difference of tunneling electroresistance (TER) ratio between n- and p-type MFIS-FTJ, which cannot be understood just by the depletion/accumulation for majority carriers in semiconductor.

中文翻译：

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N型和P型半导体上的金属-铁电-绝缘体-半导体隧道结的导电机理

通过新开发的模型阐明了使用金属-铁电绝缘体-半导体（MFIS）在n型和p型半导体上的铁电隧道结（FTJ）的导电机理，并通过实验结果进行了验证。在该模型中，包括了从导带和价带的电子隧穿以及从价带的空穴隧穿，以计算MFIS-FTJ在开/关状态下的读取电流。该模型解释了p型ON / OFF状态的意外极化极性以及n型和p型MFIS-FTJ之间的隧穿电阻（TER）比的差异，这不能仅仅通过大多数的耗尽/累积来理解半导体中的载流子。