Single crystal of Eu³⁺-doped cadmium molybdate (Cd_0.9268▯_0.0244Eu_0.0488MoO₄, where ▯ denotes cationic vacancies) has been successfully grown by the Czochralski method in air and under 1 MPa. X-ray diffraction analysis indicates that as-grown single crystal exhibits tetragonal scheelite-type structure (a = b = 5.16188(14) Å; c = 11.2080(5) Å; space group I4₁/a). Eu³⁺ ions do not show long-range order and they are randomly distributed in CdMoO₄ framework substituting Cd²⁺ ones. UV–vis diffuse reflectance measurements revealed very close optical band gap (E_g) values, i.e. ∼1.74 eV along [100] and [001] crystallographic directions that are twice smaller than E_g of microcrystalline pure CdMoO₄ as well as powder Eu³⁺-doped single crystal. Magnetic and electrical studies of Eu³⁺-doped cadmium molybdate single crystal showed a paramagnetic and n-type semiconducting behaviour with the metal-insulator transition above 350 K along both crystallographic directions. Dielectric results analysis using the Cole-Cole fit function revealed that the dipole relaxation process has different time scale depending on the crystallographic direction and exhibits Arrhenius temperature dependence for both studied directions. This fact is accompanied by the colossal dielectric permittivity with ε_r > 8⋅10³. The above results are considered in the framework of narrow europium multiplets of energy comparable to thermal energy.

铕的单晶³⁺掺杂钼酸镉（Cd的_0.9268 ▯ _0.0244 Eu的_0.0488的MoO ₄，其中▯表示阳离子空位）已成功地通过切克劳斯基法在空气中，并在1MPa的生长。X射线衍射分析表明，生长中的单晶表现出四方白钨矿型结构（a  =  b  = 5.16188（14）Å；c  = 11.2080（5）Å；空间群I4 ₁ / a）。Eu ³⁺离子不显示远距离有序，而是随机分布在取代Cd ^2+的CdMoO ₄骨架中那些。紫外可见漫反射测量显示非常接近的光学带隙（E _g）值，即沿[100]和[001]结晶方向的〜1.74 eV，是微晶纯CdMoO ₄和粉末Eu ^3的E _g的两倍小。⁺掺杂的单晶。掺杂Eu ^3+的钼酸镉镉单晶的磁性和电学研究显示顺磁性和n金属-绝缘体在两个晶体学方向上跃迁超过350 K时，会出现两种类型的半导体行为。使用Cole-Cole拟合函数进行的介电结果分析表明，偶极子弛豫过程具有不同的时标，具体取决于晶体学方向，并且在两个研究方向上均表现出阿累尼乌斯温度依赖性。这一事实是伴随着巨大的介电常数与ε _{- [R}  >8⋅10 ³。以上结果是在与热能相当的窄euro多重能量框架内考虑的。