In here, a new structure based on doping less tunneling CNTFET is introduced. The CNT semiconductor is intrinsic throughout and selected for the source and drain regions of metals with appropriate work functions. The whole process of importing doping is eliminated, and the source and drain regions are created only by applying two metals with different work functions. The drain metal work function is 1 eV lower and those of source, is 1 eV higher than the CNT work function. The simulation is performed in the ballistic regime by solving the Poisson and Schrodinger equations in a self-consistent way using the non-equilibrium Green's function method. The results show that the proposed structure widens the barrier on the drain-channel connection and consequently improves the band-to-band tunneling and the ambipolar behavior of the device. Also, the proposed structure reduces the OFF state current, increases the current ratio and decreases the subthreshold swing.

在此，介绍了一种基于较少掺杂隧道的CNTFET的新结构。CNT半导体始终是固有的，并选择具有适当功函数的金属的源极和漏极区域。消除了导入掺杂的整个过程，并且仅通过施加具有不同功函数的两种金属来创建源极和漏极区域。漏极金属功函比CNT功函低1 eV，而源极功函比CNT高1 eV。通过使用非平衡格林函数方法以自洽方式求解泊松和薛定inger方程，在弹道状态下进行了仿真。结果表明，所提出的结构拓宽了漏极-沟道连接的势垒，从而改善了带间隧穿和器件的双极性行为。也，