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Low Voltage Reversible Manipulation of Ferromagnetic Resonance Response in CoFeB/HfO2 Heterostructures
Chinese Physics Letters ( IF 3.5 ) Pub Date : 2020-12-24 , DOI: 10.1088/0256-307x/37/12/127501
Yangping Wang 1, 2 , Hongyan Zhou 3 , Yibing Zhao 1, 2 , Fufu Liu 1, 2 , Changjun Jiang 1, 2
Affiliation  

We report that the ferromagnetic resonance (FMR) response of the CoFeB/HfO2 heterostructures is stabilized and reversibly manipulated by ionic gel. Ionic gel with excellent flexibility is used as a medium to form an electric field. When a 4 V gate voltage is applied, the resonance field H r and peak-to-peak linewidth ΔH pp at different angles are regulated. When θ = 20, the H r is regulated up to 82 Oe. When θ = 70, ΔH pp is tuned up to 75 Oe. When the gate voltage is repeatedly applied, the FMR spectra can be freely switched between the initial state and the gated state. Our study provides an effective method to manipulate the damping of the magnetic film stably and reversibly.



中文翻译:

CoFeB/HfO2 异质结构中铁磁共振响应的低压可逆操作

我们报告了CoFeB/HfO 2异质结构的铁磁共振(FMR) 响应被离子凝胶稳定和可逆地操纵。具有优异柔韧性的离子凝胶用作形成电场的介质。当施加 4 V 栅极电压时,谐振场H r和不同角度的峰峰线宽 Δ H pp得到调节。θ = 20 时,H r被调节到 82 Oe。当θ = 70 时,ΔH pp调到 75 Oe。当重复施加栅极电压时,FMR光谱可以在初始状态和门控状态之间自由切换。我们的研究提供了一种稳定且可逆地控制磁膜阻尼的有效方法。

更新日期:2020-12-24
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