In this paper, a series of experiments were carried out to explore the effect of slurry pH on materials removal rate (MRR) and surface quality in lapping of Si₃N₄ ceramics wafers with fixed abrasive pad (FAP) using different slurries with different pH. Then, the scanning electron microscope was employed to detect the microtopography and abrade smooth of FAP for exploring the effect of slurries pH on self-conditioning of pad. Experimental results demonstrated that the roughness of wafers increase with the increasing of slurry pH value. The surface of wafers is the best when the pH = 1 and the worst When the pH = 13. The MRR decreases firstly and then decreases with the increasing of the pH. The MRR reaches the lowest when slurry pH = 7, and reaches the highest when slurry pH = 13. These results further suggest that the soften layer of SiO₂ could be formed due to the reactions between water and materials on wafer surface, which facilitates increasing material remove rate and improving the surface quality. The hydrogen ion and triethanolamine in slurry could react with the copper in fixed abrasive pad, which also could enhance the materials remove rate and affect the surface quality.

本文通过固定磨料垫（FAP）研磨Si ₃ N ₄陶瓷片时，采用不同pH值的浆料进行了一系列实验，探讨浆料pH值对材料去除率（MRR）和表面质量的影响。。然后，利用扫描电子显微镜检测FAP的微形貌和磨损光滑度，探讨浆料pH值对垫自调节的影响。实验结果表明，晶圆的粗糙度随着浆料pH值的增加而增加。pH=1时晶圆表面最好，pH=13时最差。随着pH的增加，MRR先减小后减小。当浆料pH = 7时，MRR达到最低，当浆料pH = 13时，MRR达到最高。这些结果进一步表明，由于水和晶圆表面材料之间的反应，可以形成SiO 2 软化层，_这有利于提高材料去除率并提高表面质量。浆料中的氢离子和三乙醇胺会与固定磨料垫中的铜发生反应，从而提高材料去除率并影响表面质量。