Majority carrier mobility is one of the most fundamental and yet important carrier transport parameters determining the optimal device architecture and performance of the emerging antimony chalcogenide solar cells. However, carrier mobility measurements based on the Hall effect have limitations for these highly anisotropy materials due to the discrepancy of transport directions under Hall measurement and device operation. Herein, a defect‐resolved mobility measurement (DRMM) method enabling the evaluation of effective majority carrier mobility from a working device without such limitations is presented. Using this method, comprehensive information about the carrier transport in representative Sb₂S₃ and Sb₂Se₃ solar cells is extracted. Though with preferred [hk1]‐crystalline orientation, Sb₂S₃ and Sb₂Se₃ still suffer from extremely low carrier mobility and low carrier density, respectively, resulting in large bulk resistance and poor carrier collection efficiency. Further crystalline structure analysis discloses that crystalline defects such as dislocations may significantly constrain carrier transport in these low‐dimensional materials. These results suggest that a p‐i‐n device architecture with fully depleted absorber is a promising optimization approach for further efficiency advances of antimony chalcogenide solar cells.

中文翻译：

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高度各向异性锑硫族化物薄膜太阳能电池中已解决缺陷的有效多数载流子迁移率

多数载流子迁移率是最基本也是最重要的载流子传输参数之一，决定着新兴的硫族硫属化物太阳能电池的最佳器件结构和性能。但是，基于霍尔效应的载流子迁移率测量由于霍尔测量和器件操作下传输方向的差异，对这些高度各向异性的材料存在局限性。在此，提出了一种缺陷解决的迁移率测量（DRMM）方法，该方法能够评估工作装置中有效多数载流子迁移率，而没有这种限制。使用此方法，可以了解有关代表性Sb ₂ S ₃和Sb ₂ Se _3中载流子传输的全面信息提取太阳能电池。尽管Sb ₂ S ₃和Sb ₂ Se ₃具有优选的[hk1]-晶体取向，但它们仍分别具有极低的载流子迁移率和低的载流子密度，从而导致大的体电阻和较差的载流子收集效率。进一步的晶体结构分析表明，诸如位错之类的晶体缺陷可能会严重限制这些低维材料中的载流子传输。这些结果表明，吸收剂完全耗尽的ap-n设备结构是锑硫族化物太阳能电池进一步提高效率的有前途的优化方法。