— This work reports the growth optimization and analysis of ZnO, Mg_xZn_1-xO, and Cd_xZn_1-xO thin films on silicon substrate using an electron beam evaporation system. The crystal phase purity, surface morphology, optical and electrical properties of deposited ZnO, Mg_xZn_1-xO, and Cd_xZn_1-xO thin films were studied. X-ray diffraction (XRD) spectra revealed that the deposited films were polycrystalline in nature with preferred (002) crystal orientation. Field emission scanning electron microscope study showed a dense-packed grained structure with an exact symmetrical distribution. The root-mean-square roughness of 3.03 nm was perceived by atomic force microscopy measurement for Mg_xZn_1-xO thin-film, indicating good morphology of the deposited film. Photoluminescence measurement demonstrated a near-band-edge emission peak around 363 nm for ZnO thin film. The energy band gap obtained for ZnO, Mg_xZn_1-xO, and Cd_xZn_1-xO were 3.36 eV, 3.86 eV, and 2.89 eV, respectively, as measured by Ultraviolet–Visible spectroscopy. The higher amount of photocurrent was detected in illumination condition compared to dark condition with responsivity 0.54 AW^-1 for ZnO films, making it suitable for photodiodes applications.

—这项工作报告了使用电子束蒸发系统对硅衬底上的ZnO，Mg _x Zn _1-x O和Cd _x Zn _1-x O薄膜进行生长优化和分析。沉积的ZnO，Mg _x Zn _1-x O和Cd _x Zn _1-x的晶相纯度，表面形态，光学和电学性质研究了O薄膜。X射线衍射（XRD）光谱表明，沉积的膜本质上是多晶的，具有优选的（002）晶体取向。场发射扫描电子显微镜研究表明，密实堆积的颗粒结构具有精确的对称分布。通过原子力显微镜测量可知，Mg _x Zn _1-x O薄膜的均方根粗糙度为3.03 nm ，表明沉积膜的形态良好。光致发光测量表明，ZnO薄膜在363 nm附近有一个近能带边缘发射峰。ZnO，Mg _x Zn _1-x O和Cd _x Zn _1-x的能带隙通过紫外可见光谱法测得的O分别为3.36 eV，3.86 eV和2.89 eV。与黑暗条件相比，在光照条件下检测到的光电流量更高，对于ZnO薄膜的响应度为0.54 AW ^-1，这使其适用于光电二极管应用。