La₃Si₆N₁₁:Ce³⁺ (LSN:Ce³⁺) phosphor has attracted widespread attention in the field of high-power white light-emitting diodes as it can be effectively excited by blue LED chip and exhibits excellent thermal quenching. To improve the emission intensity is always the critical objective of La₃Si₆N₁₁:Ce³⁺. In this paper, the strategy by combining CeO₂ and CeN as cerium sources of the activator was developed to enhance the emission intensity. The emission intensity of NO-LSN:Ce³⁺ is 112.8% of that of N-LSN:Ce³⁺, which benefits from the enhancement of the concentration of Ce³⁺ ions. Generally, more Ce⁴⁺ ions can enter into the lattice of La₃Si₆N₁₁ at high concentration due to the smaller ionic radius of Ce⁴⁺ than Ce³⁺. After that, Ce⁴⁺ ions can be effectively reduced to Ce³⁺ ions at high temperature. The luminescence improvement mechanism of as-prepared phosphors was analyzed. This research provides an effective method for improving the emission intensity of nitride or oxy-nitride phosphors.

La ₃ Si ₆ N ₁₁：Ce ³⁺（LSN：Ce ³⁺）荧光粉由于可以被蓝色LED芯片有效激发并具有出色的热猝灭性能，因此在高功率白光发光二极管领域引起了广泛的关注。La ₃ Si ₆ N ₁₁：Ce ³⁺始终是提高发射强度的关键目标。本文提出了结合CeO ₂和CeN作为活化剂铈源的策略，以提高发光强度。NO-LSN：Ce ³⁺的发射强度是N-LSN：Ce ³⁺的发射强度的112.8％，这得益于Ce ³⁺离子浓度的提高。通常，由于Ce ^4+的离子半径小于Ce ³⁺，更多的Ce ⁴⁺离子可以高浓度进入La ₃ Si ₆ N ₁₁的晶格。之后，可以在高温下将Ce ⁴⁺离子有效地还原为Ce ³⁺离子。分析了制备的荧光粉的发光机理。这项研究为提高氮化物或氮氧化物磷光体的发射强度提供了一种有效的方法。