In this study, we present an effective method of improving the performance of pure sulfide Cu(InGa)S₂ (CIGS) solar cells via injection annealing system. The injection annealing system can perform annealing at desired temperatures, and therefore, the CIGS thin film passed over the temperature range in which secondary phases occurs. Via the injection annealing system, secondary phase InS_x was effectively removed from the surface of the CIGS thin films at the temperatures over 550°C. This resulted in the formation of good-quality P–N junction CIGS devices, thereby improving significantly the performance of the CIGS solar cell. In addition, the open-circuit-voltage (V_OC) and fill factor (FF) of the CIGS devices increased gradually with increasing annealing temperature in the range of 550–640°C. It is speculated that the bulk defects were decreased as the annealing temperature increased. Finally, via injection annealing system, a pure sulfide CIGS solar cell with an efficiency of 12.16% was achieved.

在这项研究中，我们提出了一种通过注入退火系统提高纯硫化物Cu（InGa）S ₂（CIGS）太阳能电池性能的有效方法。注入退火系统可以在所需温度下进行退火，因此，CIGS薄膜在发生次级相的温度范围内通过。通过注入退火系统，在超过550°C的温度下有效地从CIGS薄膜的表面去除了第二相InS _x。这导致了良好的品质P上的形成- N结CIGS器件，从而显著改进CIGS太阳能电池的性能。此外，开路电压（V _OC）和CIGS器件的填充因数（FF）随着退火温度在550 – 640°C范围内的增加而逐渐增加。据推测，随着退火温度的升高，体缺陷减少了。最终，通过注入退火系统，获得了效率为12.16％的纯硫化物CIGS太阳能电池。