当前位置：
X-MOL 学术
›
Int. J. Circ. Theory Appl.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Variability analysis of resistive ternary content addressable memories
International Journal of Circuit Theory and Applications ( IF 1.8 ) Pub Date : 2020-12-22 , DOI: 10.1002/cta.2919 Mohamed A. Bahloul 1, 2 , Mohammed E. Fouda 3, 4 , Imen Barraj 1 , Mohamed Masmoudi 1
International Journal of Circuit Theory and Applications ( IF 1.8 ) Pub Date : 2020-12-22 , DOI: 10.1002/cta.2919 Mohamed A. Bahloul 1, 2 , Mohammed E. Fouda 3, 4 , Imen Barraj 1 , Mohamed Masmoudi 1
Affiliation
|
Resistive ternary content addressable memories (Re‐TCAMs) are considered a potential platform for in‐memory associative processing. Re‐TCAM permits the store and process of the data in the same physical area, allowing in‐memory computing. Given the unique properties of the non‐volatile memristive device, Re‐TCAM is capable of low search energy, large‐scale storage, and massively parallel processing. However, like any other semiconductor, memristor as a nanodevice suffers from fabrication process imperfections that provoke a significant variance in their high (RH) and low (RL) resistance states. These variations might lead to the malfunction of the Re‐TCAM array and affect its performance and reliability. This paper proposes a simplified mathematical formulation of the memristor state variability for 2T2M bit‐cell‐based Re‐TCAM array. We present a comprehensive statistical design, considering different circuit parameters and variance effects, such as tolerance of memristance variation, the memristor ratio (
), transistor technology, and memory width. The impact of these parameters on the performance is formulated as the probability of error is extensively studied, and a closed‐form expression for the optimal threshold voltage is derived. The utility of the presented investigation is illustrated using a design example with real device parameters.
中文翻译：
电阻三态内容可寻址存储器的变异性分析
电阻式三态内容可寻址存储器（Re-TCAM）被认为是内存关联处理的潜在平台。Re-TCAM允许在同一物理区域中存储和处理数据，从而实现内存中计算。鉴于非易失性忆阻设备的独特性能，Re-TCAM能够实现低搜索能量，大规模存储和大规模并行处理。然而，像任何其他半导体一样，忆阻器作为纳米器件也受到制造工艺缺陷的困扰，这些缺陷会导致其高（R H）和低（R L）产生巨大差异。）抵抗状态。这些变化可能导致Re-TCAM阵列发生故障，并影响其性能和可靠性。本文针对基于2T2M比特单元的Re-TCAM阵列，提出了忆阻器状态可变性的简化数学公式。我们提出了一种综合的统计设计，其中考虑了不同的电路参数和方差效应，例如忆阻变化的容差，忆阻器比（），晶体管技术和存储器宽度。随着对误差概率的深入研究，这些参数对性能的影响得以表述，并得出了最佳阈值电压的闭式表达式。使用具有真实设备参数的设计示例说明了所提出调查的实用性。
更新日期：2021-02-21
), transistor technology, and memory width. The impact of these parameters on the performance is formulated as the probability of error is extensively studied, and a closed‐form expression for the optimal threshold voltage is derived. The utility of the presented investigation is illustrated using a design example with real device parameters.
中文翻译：
电阻三态内容可寻址存储器的变异性分析
电阻式三态内容可寻址存储器（Re-TCAM）被认为是内存关联处理的潜在平台。Re-TCAM允许在同一物理区域中存储和处理数据，从而实现内存中计算。鉴于非易失性忆阻设备的独特性能，Re-TCAM能够实现低搜索能量，大规模存储和大规模并行处理。然而，像任何其他半导体一样，忆阻器作为纳米器件也受到制造工艺缺陷的困扰，这些缺陷会导致其高（R H）和低（R L）产生巨大差异。）抵抗状态。这些变化可能导致Re-TCAM阵列发生故障，并影响其性能和可靠性。本文针对基于2T2M比特单元的Re-TCAM阵列，提出了忆阻器状态可变性的简化数学公式。我们提出了一种综合的统计设计，其中考虑了不同的电路参数和方差效应，例如忆阻变化的容差，忆阻器比（
），晶体管技术和存储器宽度。随着对误差概率的深入研究，这些参数对性能的影响得以表述，并得出了最佳阈值电压的闭式表达式。使用具有真实设备参数的设计示例说明了所提出调查的实用性。
京公网安备 11010802027423号