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Spin-resolved transport properties in monolayer phosphorene superlattice
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2020-12-23 , DOI: 10.1016/j.spmi.2020.106779
A. Boroughan , E. Faizabadi

The transmission probability and spin-polarization in the exposure of the exchange field for the Phosphorene superlattice are investigated by placing a ferromagnetic insulator over the layer of phosphorene at the barrier area based on the transfer matrix. In addition, the results of transmission probability in the exposure of the exchange field for phosphorene superlattice have compared with results for a single barrier. Tuning the barrier width, the transmission probability for phosphorene superlattice can reach one. Furthermore, the full transmission probability has occurred for the zero incoming angles by raising the barrier numbers, whereas the transmission probability for the zero incoming angles has been low in one barrier. Adding the barrier number, the perfect transmission probability and 100% spin polarization have occurred for more number of incident energies. As well, the perfect transmission probability has happened at the smaller incident energies through raising the barrier number. Furthermore, the best results for the perfect transmission probability and 100% spin-polarization for the system have occurred in twenty barriers that these results can be utilized in the modeling spintronic devices. Besides, by extending the separation distance between the two barriers, the number of transmission probability fluctuations has been raised.



中文翻译:

单层phosphor超晶格的自旋分辨输运性质

通过将铁磁绝缘体放在基于传输矩阵的势垒区的磷层之上,研究了磷光体超晶格交换场曝光中的传输概率和自旋极化。另外,将phosphor超晶格交换场暴露下的传输概率结果与单个势垒的结果进行了比较。调节势垒宽度,磷超晶格的透射概率可以达到1。此外,通过增加势垒数,对于零入射角已经发生了完全透射的概率,而对于零入射角,在一个障碍中的透射概率很低。添加障碍编号,对于更多数量的入射能量,出现了理想的传输概率和100%的自旋极化。同样,通过提高势垒数,在较小的入射能量处也发生了理想的传输概率。此外,针对系统的最佳传输概率和100%自旋极化的最佳结果已经出现在二十个障碍中,这些结果可用于建模自旋电子器件。此外,通过延长两个障碍之间的间隔距离,增加了传输概率波动的数量。对于系统的最佳传输概率和100%自旋极化的最佳结果出现在二十个障碍中,这些障碍可用于建模自旋电子器件。此外,通过延长两个障碍之间的间隔距离,增加了传输概率波动的数量。对于系统的最佳传输概率和100%自旋极化的最佳结果出现在二十个障碍中,这些障碍可用于建模自旋电子器件。此外,通过延长两个障碍之间的间隔距离,增加了传输概率波动的数量。

更新日期:2021-02-08
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