In symmetric Mg_xZn_1-xO/ZnO quantum wells (QWs), which are the basic structures of high electronic mobility transistors (HEMTs), the electron states and optical phonon modes are clarified with the dielectric continuum model, uniaxial model, and force balance equation. Then, the electronic mobility affected by optical phonons is obtained around room temperature by a weight model combined with Lei-Ting's force-balance equation, in consideration of mixed phases in Mg_xZn_1-xO (0.37<x < 0.62). Our results show that the potentials of QW's barriers, sharply influenced by the built-in electric field, present a novel fluctuation in mixed phases region with increasing Mg composition x, contrasting to the results only influenced by ternary mixed crystals effect. Meanwhile, compared rocksalt (RS) phase barriers with wurtzite (WZ) ones in QWs, the confinement on both optical interface and confined phonons is stronger in the well and weaker in the barriers. Furthermore, the total electronic mobility in the QWs is mainly influenced by WZ and RS phases, in small (x < 0.37) and large (x > 0.62) Mg composition regions, respectively. In WZ phase, the mobility first reaches a minimum due to the strong polarizations, then rises to a maximum in RS phase. It indicates that the restriction of electronic mobility from different phases should be a primary consideration for the designation of HEMTs. Strong temperature and size dependences of the mobility are also revealed as well. Relatively thicker well width of QWs is more beneficial to increase electronic mobility.

在作为高电子迁移率晶体管（HEMT）基本结构的对称Mg _x Zn _{1- x} O / ZnO量子阱（QW）中，通过介电连续体模型，单轴模型和力平衡方程。然后，考虑到Mg _x Zn _{1- x} O中的混合相（0.37 < x  <0.62），通过重量模型结合Lei-Ting的力平衡方程，可以在室温附近获得受光子影响的电子迁移率。我们的结果表明，QW势垒的势能受内置电场的强烈影响，随着Mg含量的增加，在混合相区域呈现出新的波动X，对比仅由三元混晶效应的影响的结果。同时，将QWs中的岩盐（RS）相障与纤锌矿（WZ）相障相比，在光界面和受限声子上的限制在势垒中更强，在势垒中更弱。此外，QW中的总电子迁移率主要受WZ和RS相位的影响，在小（x  <0.37）和大（x ≥0.62）的镁成分区域。在WZ阶段，由于强极化，迁移率首先达到最小值，然后在RS阶段上升到最大值。它表明从不同阶段限制电子移动性应该是指定HEMT的主要考虑因素。还显示出迁移率的强烈温度和大小依赖性。QW的相对较宽的阱宽度对于增加电子迁移率更有利。