We investigate the hot carrier injection effect (HCI) and how X-ray radiation impacts the HCI of 22-nm nFinFETs as a function of device geometry and irradiation bias conditions in this paper. In the HCI test, the degradation of threshold voltage and saturation current decreases with the increase of fin number, which means that HCI weakens when the fin number increases. The reason is attributed to the coupling effect between fins. Moreover, irradiation is shown to weaken the degradation during the subsequent hot carrier test. The influence of irradiation on HCI is more obvious with ON bias than that of OFF bias and transmission gate bias. It is supposed that the Si–H bonds can be broken by irradiation before the HCI test, which is one reason for the irradiation influence on HCI. Besides, trapped charges are generated in the shallow trench isolation by the radiation, which could reduce the channel electric field, and then weaken the HCI.

在本文中，我们研究了热载流子注入效应 (HCI) 以及 X 射线辐射如何影响 22-nm nFinFET 的 HCI 作为器件几何形状和辐照偏置条件的函数。在HCI测试中，阈值电压和饱和电流的退化随着鳍片数量的增加而减小，这意味着随着鳍片数量的增加HCI减弱。其原因归结于鳍片之间的耦合效应。此外，在随后的热载流子测试中，辐照显示减弱了降解。辐照对 HCI 的影响在 ON 偏压下比在 OFF 偏压和传输门偏压下更明显。推测在 HCI 测试之前，Si-H 键可以通过辐照破坏，这是辐照对 HCI 影响的原因之一。除了，