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Piezoelectric sensors fabricated by depositing solution-grown ZnO nanorods on flexible graphene-derivative electrodes
Flexible and Printed Electronics ( IF 2.8 ) Pub Date : 2020-12-18 , DOI: 10.1088/2058-8585/abce4b
Dogan Sinar , George K Knopf

Zinc oxide nanorods (ZnO-NRs) with high-aspect ratios can significantly enhance the voltage output of mechanically flexible piezoelectric materials. A versatile chemical synthesis process for growing long narrow ZnO-NR from nanoparticle (NP) seeds by regulating the polarity of reaction solvents is introduced in this paper. The efficient nanorod (NR) growth method produces large quantities of high-aspect ratio ZnO-NRs in the reaction solvent. For ultra-small NP seeds (AVG 10.54 nm, SD 3.69), the synthesis process creates NRs with a minimal lateral growth (AVG 13.92 nm, SD 4.77) and significant longitudinal growth (AVG 150.85 nm, SD 64.93). The average aspect ratio of ZnO-NRs in the solution is ∼10.8 (SD 2.48). Once synthesized, the ZnO-NRs are mixed with polydimethylsiloxane (PDMS) to create a thin flexible piezoelectric layer/film. The composite polymer material is spin coated on an inkjet printed graphene/carboxymethyl cellulose (G-CMC) interdigitated electrode (IDE) to form the piezoelectric layer. A dielectrophoretic alignment technique is then used to reposition the NR orientations in the composite prior to final polymer curing. In this study, three different piezoelectric composites are investigated and compared: polyhedral NPs (ZnO-NP/PDMS), non-aligned nanorods (ZnO-NRNA/PDMS), and aligned nanorods (ZnO-NRA/PDMS). Each composite is deposited on a similar IDE and tested for impact loading and low frequency mechanical bending. Under bending, the NP ZnO-NP/PDMS sensor generated 3–4 mV while the non-aligned NR ZnO-NRNA/PDMS sensor produced 70–80 mV. In contrast, the horizontally aligned NR ZnO-NRA/PDMS sensor generated 150–170 mV under the same bending conditions.



中文翻译:

通过将溶液生长的ZnO纳米棒沉积在柔性石墨烯衍生物电极上而制成的压电传感器

高纵横比的氧化锌纳米棒(ZnO-NRs)可以显着提高机械柔性压电材料的电压输出。本文介绍了一种通过调节反应溶剂的极性从纳米粒子(NP)种子中生长长而窄的ZnO-NR的通用化学合成方法。高效的纳米棒(NR)生长方法会在反应溶剂中产生大量高纵横比的ZnO-NR。对于超小NP种子(AVG 10.54 nm,SD 3.69),合成过程会产生具有最小横向生长(AVG 13.92 nm,SD 4.77)和明显纵向生长(AVG 150.85 nm,SD 64.93)的NR。溶液中ZnO-NRs的平均长径比约为10.8(SD 2.48)。合成后,将ZnO-NRs与聚二甲基硅氧烷(PDMS)混合以形成薄的柔性压电层/薄膜。将复合聚合物材料旋涂在喷墨印刷的石墨烯/羧甲基纤维素(G-CMC)叉指电极(IDE)上以形成压电层。然后,在最终聚合物固化之前,使用介电泳对准技术将NR方向重新定位在复合材料中。在这项研究中,研究和比较了三种不同的压电复合材料:多面NPs(ZnO-NP / PDMS),非取向纳米棒(ZnO-NR)NA / PDMS)和对齐的纳米棒(ZnO-NR A / PDMS)。每个复合材料都沉积在类似的IDE上,并进行冲击载荷和低频机械弯曲测试。在弯曲下,NP ZnO-NP / PDMS传感器产生3–4 mV,而未对准的NR ZnO-NR NA / PDMS传感器产生70–80 mV。相反,在相同的弯曲条件下,水平排列的NR ZnO-NR A / PDMS传感器产生150-170 mV。

更新日期:2020-12-18
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