During the last decade, there has been considerable interest of researchers towards the use of two-dimensional (2D) materials for the electronic device implementations. The main driving force is the improved performance offered by these 2D materials for electronic device operation in nano-scale regime. Among these 2D material, silicene (the 2D of silicon) has emerged as preferred choice because of its expected integration with silicon based technology. This expected integration of silicene with silicon technology is one of the primary advantages of silicene as a material for future electronic devices with the availability of infrastructure of bulk silicon for its processing. Silicene in its basic form is a conductor due to the zero bandgap formation and therefore several techniques have been given in the open literature for forming the band gap in silicene. Besides, silicene has been used to design several electronic devices ranging from transistors to photodetectors. In this paper, a review of silicene is presented considering a) the features/properties offered by it, b) the methods employed for the generation of its bandgap, c) different types of field effect transistors (FETs) reported on silicene, and d) spintronic applications of silicene.

在过去的十年中，研究人员对将二维（2D）材料用于电子设备实现方式已经引起了相当大的兴趣。主要驱动力是这些2D材料为纳米级电子设备操作提供的改进性能。在这些2D材料中，硅（硅的2D）已成为首选，因为它有望与基于硅的技术集成。硅与硅技术的这种预期的集成是硅作为可用于未来电子设备的材料的主要优点之一，并且具有可用于其处理的块状硅的基础设施。由于零带隙的形成，其基本形式的硅是导体，因此公开文献中已经给出了几种在硅中形成带隙的技术。此外，硅树脂已被用于设计从晶体管到光电检测器的多种电子设备。在本文中，对硅进行了综述，其中考虑了a）其提供的特性/性能，b）产生其带隙的方法，c）硅上报道的不同类型的场效应晶体管（FET）和d ）硅的自旋电子学应用。