A capacitive memory effect has been reported for Ag nanoparticles (NPs) sheltered In₂O₃ nanowires (NWs) devices. To compare the performance with that of bare In₂O₃ NWs, two devices (viz. In₂O₃ NW/Ag NPs and In₂O₃ NW) were fabricated on n-Si substrate inside the electron beam (e-beam) evaporator using the double-step glancing angle deposition (GLAD) technique. The field emission scanning electron microscopy (FESEM) shows the formation of In₂O₃ NWs and Ag NPs. The high-resolution transmission electron microscopy (HRTEM) shows the formation of uneven NWs and selected area electron diffraction (SAED) analysis confirmed the amorphous nature of the NWs. An averagely ∼7.5 and ∼9.3 fold enhanced absorption was observed in the UV region and visible region for In₂O₃ NW/Ag NPs. The modulation in current density of ∼4.5 fold at +10 V and ∼5.7 fold at −10 V were observed for the fabricated In₂O₃ NW/Ag NPs MOS device. At 2 MHz frequency response, the In₂O₃ NW/Ag NPs device depicted a low interface trap density (D_it) of ∼0.2 × 10¹⁰ cm⁻² eV⁻¹. The maximum memory window of 5.61 V at ±8 V was extracted for the In₂O₃ NW/Ag NPs device from the large C-V hysteresis curve, thus establishing a strong presence of memory window in the device.

中文翻译：

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银纳米颗粒保护 In2O3 纳米线作为电容性 MOS 存储器件

已经报道了用于掩蔽在₂ O ₃纳米线 (NW) 器件中的Ag 纳米粒子 (NP) 的电容记忆效应。为了将性能与裸 In ₂ O ₃ NW的性能进行比较，在电子束（电子束）内的 n-Si 衬底上制造了两种器件（即 In ₂ O ₃ NW/Ag NP 和 In ₂ O ₃ NW）蒸发器采用双步掠射角沉积 (GLAD) 技术。场发射扫描电子显微镜 (FESEM) 显示 In ₂ O ₃的形成NW 和 Ag NP。高分辨率透射电子显微镜 (HRTEM) 显示不均匀 NW 的形成，选区电子衍射 (SAED) 分析证实了 NW 的无定形性质。In ₂ O ₃ NW/Ag NPs在紫外区和可见光区的吸收平均提高了约 7.5 倍和约 9.3 倍。对于制造的 In ₂ O ₃ NW/Ag NPs MOS 器件，观察到电流密度调制在 +10 V 时为~4.5 倍，在 -10 V 时为~5.7 倍。在 2 MHz 频率响应下，In ₂ O ₃ NW/Ag NPs 器件显示出低界面陷阱密度（D_it ) ~0.2 × 10 ¹⁰  cm ^-2 eV ^-1。从大 CV 滞后曲线中提取 In ₂ O ₃ NW/Ag NPs 器件在 ±8 V 时的最大内存窗口为 5.61 V ，从而在器件中建立了强大的内存窗口。