By scaling down the technology node to the deep nanoscale, the vulnerability of digital circuits to radiation and the intensive increase of leakage power have become of concern. Accordingly, designing radiation-hardened (rad-hard) memory elements based on non-volatile devices such as magnetic tunnel junction (MTJ) is a promising approach to address these issues. This study proposes a novel robust and energy-efficient rad-hard latch based on a new C-element-based keeper. Moreover, the proposed rad-hard latch is employed to design a highly reliable non-volatile magnetic latch using MTJs. The proposed latches can also be exploited to form a rad-hard magnetic master–slave flip-flop. Simulations based on the 14 nm FinFET and the spin Hall effect (SHE)-assisted perpendicular MTJ models suggest that the proposed designs offer advantageous figures of merit over the prior works. Specifically, the proposed circuits offer up to 52% and 82% improvements in power and delay, respectively, when compared to their state-of-the-art counterparts. Moreover, Monte Carlo simulations validate the robust operation of the proposed design in the presence of process variations.

中文翻译：

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高能效抗辐射非易失性磁性锁存器的设计

通过将技术节点缩小到深纳米级，数字电路对辐射的脆弱性和泄漏功率的密集增加已成为人们关注的问题。因此，设计基于非易失性器件（例如磁隧道结 (MTJ)）的抗辐射（rad-hard）存储元件是解决这些问题的一种很有前景的方法。这项研究提出了一种基于新的基于 C 元素的保持器的新型鲁棒且节能的抗辐射锁存器。此外，所提出的抗辐射锁存器用于设计使用 MTJ 的高度可靠的非易失性磁性锁存器。还可以利用所提出的锁存器来形成抗辐射磁主从触发器。基于 14 nm FinFET 和自旋霍尔效应 (SHE) 辅助的垂直 MTJ 模型的模拟表明，所提出的设计提供了优于先前工作的品质因数。具体来说，与最先进的电路相比，所提出的电路在功率和延迟方面分别提高了 52% 和 82%。此外，蒙特卡罗模拟验证了在存在工艺变化的情况下所提议设计的稳健运行。