Hydride vapor phase epitaxy (HVPE) is attracting attention as a technology for reducing the epitaxial cost of III–V solar cells. To further reduce manufacturing costs, it is effective to combine HVPE with substrate-reuse technology using epitaxial lift-off (ELO). However, ELO of solar cells grown via HVPE has not yet been demonstrated. Although Al(Ga)As is typically used as the release layer for the ELO process, there is a difficulty in growing Al-containing materials on HVPE because aluminum monochloride reacts with the reactor. Here, we present the growth of AlAs via HVPE using aluminum trichloride generated by the reaction between Al metal and HCl gas at a temperature of 500 °C. The AlAs layer grown via HVPE exhibits sufficient crystal quality to achieve the ELO process. We obtained a conversion efficiency of 21.63% for a HVPE-grown GaAs single-junction solar cell peeled off from a GaAs substrate. This performance is almost similar to that of HVPE-grown solar cells on GaAs substrates without ELO.

中文翻译：

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通过氢化物气相外延生长的单结 GaAs 太阳能电池的外延剥离

氢化物气相外延 (HVPE) 作为一种降低 III-V 族太阳能电池外延成本的技术正受到关注。为了进一步降低制造成本，将 HVPE 与使用外延剥离 (ELO) 的衬底再利用技术相结合是有效的。然而，尚未证明通过 HVPE 生长的太阳能电池的 ELO。尽管 Al(Ga)As 通常用作 ELO 工艺的释放层，但由于一氯化铝与反应器发生反应，因此很难在 HVPE 上生长含铝材料。在这里，我们展示了通过 HVPE 使用铝金属和 HCl 气体在 500°C 的温度下反应产生的三氯化铝来生长 AlAs。通过 HVPE 生长的 AlAs 层表现出足够的晶体质量来实现 ELO 工艺。我们获得了 21 的转换效率。63% 的 HVPE 生长的 GaAs 单结太阳能电池从 GaAs 基板上剥离。这种性能几乎与没有 ELO 的 GaAs 基板上的 HVPE 生长太阳能电池相似。