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Design of a Class-F Power Amplifier with GaN Device Model and Reflection Data
IETE Journal of Research ( IF 1.3 ) Pub Date : 2020-12-21 , DOI: 10.1080/03772063.2020.1859950
Merve Alemdag 1 , Firat Kacar 2 , Sedat Kilinc 2
Affiliation  

A Class F power amplifier (PA) operating in the 2.5–2.7 GHz frequency band has been designed, fabricated, and tested using a gallium nitride high electron mobility transistor (GaN HEMT). The amplifier has a peak power-added efficiency (PAE) of 76.4% and output power of 8.5W with a 12.3 dB gain. This combination of high gain and high-efficiency operation across a wide frequency range creates opportunity for the design’s use in various commercial and defense applications where power consumption is a major design factor. Advanced design system (ADS) from Keysight is used for the design and simulation process. The input matching network and harmonic termination circuits are designed using the reflection data of the transistor which is extracted using non-linear model over harmonic balance analysis. The output matching circuit is designed using the obtained load pull data after the harmonic termination network design is completed. The design procedure is presented in detail, the input and output matching circuits are made according to a specific method and order. The design based on the usage of reflection data is obtained under large signal conditions. These data are then defined and evaluated as a network termination in the ADS tool. This termination hence enabled us to design harmonic suppression and output matching networks regarding the output impedance of the transistor. While design and optimization is not an easy task for non-linear analysis, it is observed that the followed and proposed procedure makes such designs easier and practical with successful results.



中文翻译:

使用 GaN 器件模型和反射数据设计 F 类功率放大器

使用氮化镓高电子迁移率晶体管 (GaN HEMT) 设计、制造和测试了工作在 2.5–2.7 GHz 频段的 F 类功率放大器 (PA)。该放大器的峰值功率附加效率 (PAE) 为 76.4%,输出功率为 8.5W,增益为 12.3 dB。这种在宽频率范围内实现高增益和高效率运行的组合为该设计在功耗是主要设计因素的各种商业和国防应用中的使用创造了机会。Keysight 的高级设计系统 (ADS) 用于设计和仿真过程。输入匹配网络和谐波终端电路是使用晶体管的反射数据设计的,这些数据是使用谐波平衡分析的非线性模型提取的。谐波终端网络设计完成后,利用获得的负载牵引数据设计输出匹配电路。详细介绍了设计过程,按照特定的方法和顺序制作了输入输出匹配电路。基于反射数据使用的设计是在大信号条件下获得的。然后将这些数据定义并评估为 ADS 工具中的网络终端。因此,这种终端使我们能够设计关于晶体管输出阻抗的谐波抑制和输出匹配网络。虽然设计和优化对于非线性分析来说不是一项容易的任务,但据观察,遵循和建议的程序使此类设计更容易和实用,并取得了成功的结果。

更新日期:2020-12-21
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