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Domain and homogeneous switching in ferroelectrics
Ferroelectrics ( IF 0.6 ) Pub Date : 2020-12-09 , DOI: 10.1080/00150193.2020.1791653 V. S. Bystrov 1 , V. M. Fridkin 2
Ferroelectrics ( IF 0.6 ) Pub Date : 2020-12-09 , DOI: 10.1080/00150193.2020.1791653 V. S. Bystrov 1 , V. M. Fridkin 2
Affiliation
Abstract The polarization switching kinetics of ferroelectric crystals and the transition from domain switching to homogeneous in nanoscale films are considered. Homogeneous (non-domain) switching according to the Ginzburg–Landau theory is possible only in two-dimensional ferroelectrics. The analysis of the results of calculations from the first principles and experiments is given.
中文翻译:
铁电体中的畴和均匀开关
摘要 考虑了铁电晶体的极化转换动力学和纳米级薄膜中从畴转换到均质的转变。根据 Ginzburg-Landau 理论的同质(非域)切换仅在二维铁电体中是可能的。给出了第一性原理和实验的计算结果分析。
更新日期:2020-12-09
中文翻译:
铁电体中的畴和均匀开关
摘要 考虑了铁电晶体的极化转换动力学和纳米级薄膜中从畴转换到均质的转变。根据 Ginzburg-Landau 理论的同质(非域)切换仅在二维铁电体中是可能的。给出了第一性原理和实验的计算结果分析。