Formation of High‐Quality Heteroepitaxial β‐Ga2O3 Films by Crystal Phase Transition,Crystal Research and Technology

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Formation of High‐Quality Heteroepitaxial β‐Ga2O3 Films by Crystal Phase Transition
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2020-12-22 , DOI: 10.1002/crat.202000149
Hansol Lee ₁ , Soyoon Kim ₁ , Hyungsoo Ahn ₁ , Kyounghwa Kim ₁ , Min Yang ₁

Affiliation

Sn‐doped ɛ‐phase dominant Ga₂O₃ films (ɛ‐Ga₂O₃ films) are grown on c‐plane sapphire substrates using metal–organic vapor‐phase epitaxy and transformed to β‐phase films by thermal annealing. The morphological and electrical properties of the phase‐transformed β‐Ga₂O₃ films dependent on experimental conditions are characterized. The ɛ‐Ga₂O₃ film is completely transformed to the β‐phase by thermal annealing to realize a high electrical conductivity while maintaining a good surface flatness. When the ɛ‐Ga₂O₃ films are grown, a mixing ratio of the β‐Ga₂O₃ component to the ɛ‐Ga₂O₃ film is controlled to improve the crystalline quality of the β‐Ga₂O₃ films transformed from ɛ‐Ga₂O₃ by annealing (transformed β‐Ga₂O₃). Compared to an as‐grown β‐Ga₂O₃ film, higher‐quality heteroepitaxial β‐Ga₂O₃ films with better electrical conductivity and surface morphology can be obtained by the phase transition method, and these results show adequate repeatability.

中文翻译：

通过晶体相变形成高质量的异质外延β-Ga2O3薄膜

锡掺杂ɛ相主导嘎_2层ö ₃膜（ɛ嘎_2层ö ₃膜）上生长Ç -平面蓝宝石衬底使用金属-有机汽相外延，并转化到通过热退火β相的膜。相转化的β-Ga的形态和电性能_2层ö ₃膜依赖于实验条件的特征。thermal -Ga ₂ O ₃膜通过热退火完全转变为β相，以实现高电导率，同时保持良好的表面平整度。当the-Ga ₂ O ₃膜生长时，β-Ga的混合比₂ ø ₃组分与ɛ嘎₂ ö ₃膜被控制以提高的β-Ga的结晶质量₂ ö ₃从ɛ -镓转化膜₂ ö ₃通过退火（转化的β-Ga ₂ ö ₃）。相比于在生长的β-Ga ₂ ö ₃膜，更高品质的异质外延的β-Ga _2层ö ₃薄膜具有更好的导电性和表面形态可通过相变方法来获得，并且这些结果显示足够的可重复性。

更新日期：2021-02-11

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