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Formation of High‐Quality Heteroepitaxial β‐Ga2O3 Films by Crystal Phase Transition
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2020-12-22 , DOI: 10.1002/crat.202000149
Hansol Lee 1 , Soyoon Kim 1 , Hyungsoo Ahn 1 , Kyounghwa Kim 1 , Min Yang 1
Affiliation  

Sn‐doped ɛ‐phase dominant Ga2O3 films (ɛ‐Ga2O3 films) are grown on c‐plane sapphire substrates using metal–organic vapor‐phase epitaxy and transformed to β‐phase films by thermal annealing. The morphological and electrical properties of the phase‐transformed β‐Ga2O3 films dependent on experimental conditions are characterized. The ɛ‐Ga2O3 film is completely transformed to the β‐phase by thermal annealing to realize a high electrical conductivity while maintaining a good surface flatness. When the ɛ‐Ga2O3 films are grown, a mixing ratio of the β‐Ga2O3 component to the ɛ‐Ga2O3 film is controlled to improve the crystalline quality of the β‐Ga2O3 films transformed from ɛ‐Ga2O3 by annealing (transformed β‐Ga2O3). Compared to an as‐grown β‐Ga2O3 film, higher‐quality heteroepitaxial β‐Ga2O3 films with better electrical conductivity and surface morphology can be obtained by the phase transition method, and these results show adequate repeatability.

中文翻译:

通过晶体相变形成高质量的异质外延β-Ga2O3薄膜

锡掺杂ɛ相主导嘎2层ö 3膜(ɛ嘎2层ö 3膜)上生长Ç -平面蓝宝石衬底使用金属-有机汽相外延,并转化到通过热退火β相的膜。相转化的β-Ga的形态和电性能2层ö 3膜依赖于实验条件的特征。thermal -Ga 2 O 3膜通过热退火完全转变为β相,以实现高电导率,同时保持良好的表面平整度。当the-Ga 2 O 3膜生长时,β-Ga的混合比2 ø 3组分与ɛ嘎2 ö 3膜被控制以提高的β-Ga的结晶质量2 ö 3从ɛ -镓转化膜2 ö 3通过退火(转化的β-Ga 2 ö 3)。相比于在生长的β-Ga 2 ö 3膜,更高品质的异质外延的β-Ga 2层ö 3薄膜具有更好的导电性和表面形态可通过相变方法来获得,并且这些结果显示足够的可重复性。
更新日期:2021-02-11
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